A novel technique for probing phase transitions in ferroelectric functional materials: Condensed matter spectroscopy

Zhang, J. Z.; Jiang, Kai; Hu, Zhigao; Chu, Junhao

doi:10.1007/s11431-015-0999-6

Cited by 1 publication

(1 citation statement)

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“…The experimental data are easy to collect, but the data analysis requires extensive modelling and fitting [186]. Ferroelectric materials have so far been investigated with ex-situ SE exclusively, involving measurements of dielectric function [187,188], optical conductivity [188], band gap [188][189][190][191][192][193][194][195], ferroelectric phase transition [193,196,197], critical thickness for strain relaxation [198], refractive index, and extinction coefficient [188-192, 194, 199]. A recent report of in situ SE monitoring during the growth of Ruddlesden-Popper phase shows that deposition of each epitaxial layer can be detected with submonolayer precision [200], confirming the potential of this technique for monitoring the growth of polar thin films in the near future.…”

Section: Reflection High-energy Electron Diffraction-electronmentioning

confidence: 99%

In situ monitoring of epitaxial ferroelectric thin-film growth

Sarott

Gradauskaite

Nordlander

et al. 2021

J. Phys.: Condens. Matter

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In ferroelectric thin films, the polarization state and the domain configuration define the macroscopic ferroelectric properties such as the switching dynamics. Engineering of the ferroelectric domain configuration during synthesis is in permanent evolution and can be achieved by a range of approaches, extending from epitaxial strain tuning over electrostatic environment control to the influence of interface atomic termination. Exotic polar states are now designed in the technologically relevant ultrathin regime. The promise of energy-efficient devices based on ultrathin ferroelectric films depends on the ability to create, probe, and manipulate polar states in ever more complex epitaxial architectures. Because most ferroelectric oxides exhibit ferroelectricity during the epitaxial deposition process, the direct access to the polarization emergence and its evolution during the growth process, beyond the realm of existing structural in situ diagnostic tools, is becoming of paramount importance. We review the recent progress in the field of monitoring polar states with an emphasis on the non-invasive probes allowing investigations of polarization during the thin film growth of ferroelectric oxides. A particular importance is given to optical second harmonic generation in situ. The ability to determine the net polarization and domain configuration of ultrathin films and multilayers during the growth of multilayers brings new insights towards a better understanding of the physics of ultrathin ferroelectrics and further control of ferroelectric-based heterostructures for devices.

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