A Novel Technique for Designing High Power Semiconductor Optical Amplifier (SOA)-Based Tunable Fiber Compound-Ring Lasers Using Low Power Optical Components

Ummy, Muhammad A.; Bikorimana, Siméon; Dorsinville, R.

doi:10.3390/app7050478

Cited by 3 publications

(4 citation statements)

References 75 publications

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“…Based on Equation (10), there are three main factors affecting SOA polarization-dependent gain-that is, (1) in the gain medium, the radiation of the TE mode caused by the degenerate process is much larger than that of the TM mode, the gain difference further expanding as the current increases; (2) the waveguide structure of the SOA is often rectangular, 𝛤 often being larger than 𝛤 in such a waveguide structure; and (3) there is a difference between the loss of the TE mode and the loss of the TM mode at the end of the SOA (that is, the difference between the 𝑅 and 𝑅 values), which also affects the SOA gain of the two modes to a certain extent. Consequently, to realize the SOA polarization insensitivity, researchers often adjust the SOA polarization-dependent gain by increasing the thickness of the active layer or changing the low-dimensional quantum structure [29][30][31].…”

Section: High Powermentioning

confidence: 99%

“…Compared with erbium-doped fiber amplifiers (EDFAs), SOAs are small and low in cost. This makes them more suitable for optical communication in the future [1][2][3][4][5]. Although the larger linewidth of SOA results in fewer channels to accommodate in S-band and L-band compared to EDFA, the wider gain bandwidth of SOAs can provide new possibilities for expanding the bandwidth resources towards the S-band.…”

Section: Introductionmentioning

confidence: 99%

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A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

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Section: High Powermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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“…Because of the homogeneous broadening behavior and longer fiber length of the ring cavity of the EDF laser configuration, multi-longitudinal-mode (MLM) oscillations are induced. To reduce the multiple MLM noise of the EDF-based laser structure, utilizations of the multiple-ring design [7][8][9], ultra-narrow optical filters [10], saturable absorbers (SA) of unpumped EDF [11,12], the Rayleigh backscattering (RB) effect [3,13], the optical selfinjection technique [14] and the Mach-Zehnder interferometer (MZI) method [15] have been experimentally demonstrated for single-longitudinal-mode (SLM) output.…”

Section: Introductionmentioning

confidence: 99%

L-Band Wavelength-Selectable Erbium Laser with Stable Single-Frequency Oscillation

et al. 2022

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In this presentation, we demonstrate an erbium-doped fiber (EDF) laser by a compound-ring structure to reach the output performances of narrow linewidth, stable single-longitudinal-mode (SLM) and high optical signal to noise ratio (OSNR) in the L-band bandwidth of 1563.0 to 1613.0 nm. Based on the Vernier effect through the compound-ring design, the substantial multi-longitudinal-mode (MLM) noises can be mitigated fully. Furthermore, the relative optical output features of the fiber laser are also performed experimentally.

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“…High-power optical amplifiers are required for an increasing number of applications, including free space optical communication, light laser detection and ranging (lidar), absorption spectroscopy, biomedical imaging, microwave photonic (MWP) analog signal processing, and low-noise mode-locked lasers for photonic analog-to-digital converters [1]- [8]. These applications most commonly utilize solid-state or doped-fiber as the gain medium [9], [10]; 50 W and greater than 150 W erbium-doped fiber amplifiers (EDFAs) have been demonstrated in the 1550 nm wavelength optical communications commercial field. In addition to high power, EDFAs also exhibit superior noise performance due to their large intracavity powers, small intracavity losses, and negligible gain/index coupling [11]- [13].…”

Section: Introductionmentioning

confidence: 99%

Monolithic Integrated Semiconductor Optical Amplifier With Broad Spectrum, High Power, and Small Linewidth Expansion

Liang

Wang

et al. 2021

IEEE Access

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Semiconductor optical amplifiers (SOAs) offer direct electrical injection, power consumption, integration, and anti-radiation advantages over optical fiber amplifiers. However, saturation output power and gain bandwidth have been limited in traditional structure SOAs. We demonstrate a monolithic integrated SOA with broad spectrum, high power, high gain, and small spectral linewidth expansion. The device adopts a two-stage amplified large optical cavity structure, and a lower optical field confinement factor was obtained by adjusting the thickness of the waveguide layer. The lower optical field confinement factor is conducive to improving the coupling efficiency and the maximum output power. Our device, fabricated only by standard i-line lithography with micron-scale precision, obtains excellent and stable performance. When the input power is set to 1 mW, the output power is 419 mW with a gain of 26.23 dB. When the input power is set to 25 mW at 25 °C , the output power increases to 600 mW with a gain of 13.8 dB. The corresponding gain bandwidth of 3 dB measures at least 70 nm. The spectral linewidth after the SOA is 1.15 times wider than that of the seed laser.INDEX TERMS broad spectrum, high gain, high power, semiconductor optical amplifiers, small linewidth expansion.

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A Novel Technique for Designing High Power Semiconductor Optical Amplifier (SOA)-Based Tunable Fiber Compound-Ring Lasers Using Low Power Optical Components

Cited by 3 publications

References 75 publications

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

L-Band Wavelength-Selectable Erbium Laser with Stable Single-Frequency Oscillation

Monolithic Integrated Semiconductor Optical Amplifier With Broad Spectrum, High Power, and Small Linewidth Expansion

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