A novel TE10–TE20 mode transducer utilizing vertical cross-excitation

Ikeuchi, Hiroaki; Matsumoto, Satoshi; Kawai, Tadashi; Ohta, Isao

doi:10.1109/mwsym.2010.5515637

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…SPA is often used experimentally to interrogate the detailed spatial dependence on the SEE vulnerability, not possible with broadbeam heavy ion irradiation. In SPA testing, the photon energy is greater than the semiconductor bandgap, thus a photon with a wavelength of less than 1.1 μm may be used to generate a single electron-hole pair (EHP) [14]. In this thesis, the simulated ion strikes are assumed to be striking the waveguide normally from the upper surface (as shown in Figure 12) and alternate strike angles are not considered here.…”

Section: Methodsmentioning

confidence: 99%

“…This trend of modes may in theory continue indefinitely; however, higher order modes tend to be less well guided and thus subject to higher power losses. Higher order modes may often be excited as artifacts of the excitation of the fundamental mode in an imperfect waveguide [13] or they may be intentionally excited via a device called a mode transducer that converts one mode to another [14].…”

Section: Photonic Integrated Circuitsmentioning

confidence: 99%

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An Electro-Optical Simulation Methodology for the Analysis of Single-Event Radiation Effects in Photonic Devices

et al. 2019

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Photonic integrated circuits (PICs) are devices that transmit and perform operations on optical signals. PICs offer significant benefits compared to conventional electronics, including increased data transmission rates. Despite the desire to leverage these benefits for space systems increasing in recent years, the study of radiation effects in PICs is still limited, especially the transient radiation effects known as single-event effects (SEEs). A roadblock in advancing the understanding of SEEs in PICs is the inability to co-simulate radiation effects in both the optical and electrical domains. Establishing a means of simulating SEEs in PICs would aide in: (1) modeling SEEs in various devices, (2) determining specific mechanisms by which SEEs upset devices, and (3) discovering methods for improving the radiation hardness of PICs. This work introduces a methodology for the simulation of SEEs in PICs that couples optical and electrical domain simulations that are required to fully characterize SEEs in PICs. vi TABLE OF CONTENTS

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Section: Methodsmentioning

confidence: 99%

Section: Photonic Integrated Circuitsmentioning

confidence: 99%

An Electro-Optical Simulation Methodology for the Analysis of Single-Event Radiation Effects in Photonic Devices

et al. 2019

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“…How to excite the SIW and realize single higher order mode transmission in a wide frequency range is still a challenge. Our literature review shows that little information has been reported about the wideband direct planar transition to the higher order modes SIW, comparing to its counterparts of rectangular waveguides [23]- [26]. In this paper, two wideband direct mode excitation structures are presented and analyzed.…”

Section: Introductionmentioning

confidence: 99%

Wideband Excitation Technology of <formula formulatype="inline"><tex Notation="TeX">${\rm TE}_{20}$</tex></formula> Mode Substrate Integrated Waveguide (SIW) and Its Applications

Wu¹,

Liu

Xue³

2015

IEEE Trans. Microwave Theory Techn.

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The higher order mode substrate integrated waveguide (SIW) has advantages in the applications, which are: 1) simplifying the structure with reduced fabrication cost and 2) enhancing the stability of performance by relaxed fabrication tolerance. In this paper, two wideband mode excitation structures are presented and investigated for the SIW. A slot along the mid line in the longitudinal direction of the SIW is employed to convert the electromagnetic field pattern between slotline and the mode SIW. The second structure is based on the slot aperture coupling and can realize wideband direct transition between the mode SIW and microstrip line. Both transitions have a simple and compact structure, as well as broadband characteristics. The wideband transition performance is demonstrated in this paper. As application examples of the transitions, two broadband substrate integrated baluns are presented and fabricated based on the mode excitation structures and mode characteristics. The 180 out-of-phase and equal magnitude of the balun outputs in a wide frequency range can be achieved inherently. The balun based on the slotline excitation has a fractional bandwidth of 50.2%, from 7.3 to 12.2 GHz, with measured return loss, amplitude imbalance, and phase imbalance better than 10 and 0.45 dB and 3.8 . The balun based on the aperture coupling excitation shows a fractional bandwidth of 50.3%, from 7 to 11.7 GHz, with measured return loss, insertion loss, amplitude imbalance, and phase imbalance better than 10, 1, and 0.27 dB and 2.4 , respectively. Both baluns not only show good performance, but also demonstrate the existence of the mode in the SIW.

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A Ka-Band TE Mode Converter

Zheng,

Pan,

et al. 2024

2024 9th International Conference on Computer and Communication Systems (ICCCS)

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A novel TE10–TE20 mode transducer utilizing vertical cross-excitation

Cited by 4 publications

References 6 publications

An Electro-Optical Simulation Methodology for the Analysis of Single-Event Radiation Effects in Photonic Devices

An Electro-Optical Simulation Methodology for the Analysis of Single-Event Radiation Effects in Photonic Devices

Wideband Excitation Technology of <formula formulatype="inline"><tex Notation="TeX">${\rm TE}_{20}$</tex></formula> Mode Substrate Integrated Waveguide (SIW) and Its Applications

A Ka-Band TE Mode Converter

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