2020
DOI: 10.1109/access.2020.3006709
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A Novel Synthesis for Bandwidth Switchable Bandpass Filters Using Semi-Conductor Distributed Doped Areas

Abstract: This paper presents a novel synthesis for bandwidth switchable bandpass filters using Semiconductor Distributed Doped Areas (ScDDAs) as active elements. A co-design method is proposed with a global and simultaneous conception for the active and the passive parts of the switchable filters. The ScDDAs, integrated in the silicon substrate, are able to commute from half-wavelength open-ended stubs to quarter-wavelength short-circuited ones. This co-design method offers a great flexibility and allows to integrate t… Show more

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Cited by 9 publications
(9 citation statements)
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“…The depth of the two junctions is around 3 µm. The process steps are described in [27]. Indeed, only two masks are required for the manufacturing, as illustrated in Figure 5.…”
Section: First Antenna Fabricationmentioning
confidence: 99%
“…The depth of the two junctions is around 3 µm. The process steps are described in [27]. Indeed, only two masks are required for the manufacturing, as illustrated in Figure 5.…”
Section: First Antenna Fabricationmentioning
confidence: 99%
“…7(d). By employing the even-and oddmode analysis along the symmetry AA" the even and odd mode resonant conditions are derived in (17) and (18) respectively,…”
Section: Filter Design For Bpf and Bsfmentioning
confidence: 99%
“…Therefore recently, reconfigurable filters have become an essential component in wireless systems and have attracted a lot of attention. Even though tunable single and multiband filtering components have been proposed [14][15][16][17][18][19][20][21][22][23][24] with a number of advantages, they usually serve a single purpose (either tunable BPF or tunable BSF). Few researchers [25][26][27][28][29][30][31][32] have presented fully reconfigurable filtering circuits exhibiting BPF-to-BSF switching capability.…”
Section: Introductionmentioning
confidence: 99%
“…This demonstrator was fabricated with only two masks: one for the doping steps and one for the metallization steps of the upper side. The manufacturing steps are detailed in [27].…”
Section: Fabrication and Measurementsmentioning
confidence: 99%
“…In order to counter these issues, reconfigurable RF components can be co-designed using semiconductor distributed doped areas (ScDDAs), such as in [23][24][25][26][27]. By designing a tunable RF device with ScDDAs, we can obtain a tunability comparable to that of classical technology with SMCs while avoiding the need for other components.…”
Section: Introductionmentioning
confidence: 99%