Photo-response switching of the CdS films grown at an optimum condition for the photo-sensor applications was investigated by an application of the electrical field. Recovery to the original dark-resistance after a light-off was achieved for 60 s by an application of the electrical field (∼30 V) in the two electrodes structure. On the other hand, in the structure of three electrodes, after application of −10 V for microsecond at third electrode at a light-off state, the dark-resistance was recovered to its original value for three second. An application of the negative electrical field in the three electrodes structure remarkably improved the switching characteristics of the photo-response of the CdS films.Optically controlled microwave switches, 1 filters, 2 and phaseshifters 3 using semiconducting materials are being developed with enthusiasm by researchers around the world. When some insulating materials are exposed to visible light, they can exhibit conducting properties similar to metal, which allows them to shield electromagnetic (EM) waves. When the light is turned off, if they revert to their original state, they can transmit EM waves effectively. Because both shielding and transmitting of high-frequency EM waves can be conveniently controlled by visible light, these materials can be widely applied for screening EM waves in the GHz frequency range.Photoconductivity by visible light in polycrystalline semiconductor films has been reported by many researchers studying a wide range of materials including amorphous-Si:H, 4, 5 PbTe, 6, 7 ZnO, 8, 9 etc. Cadmium sulfide (CdS), a non-stoichiometric n-type semiconductor with direct band-gap energy of 2.42 eV, exhibited a very high photosensitivity in the visible spectrum. The most improved dark-and photo-sheet resistance values in CdS materials were approximately 5 × 10 12 and ∼10 5 /square, respectively. 10, 11 Recently, to increase the charge carriers in the conduction band of CdS films when exposed to visible light, defects in CdS films grown using various H 2 /(Ar+H 2 ) flow ratios were located within the CdS band-gap, and did not contribute to conduction in a darkened-state. Transformation to a sheet resistance below 50 /square under visible light was accomplished using CdS films grown on flexible polyethersulfon (PES) substrates at room temperature. 12 In the case of polymer substrates, they have many merits compared with those deposited onto glass substrates; they are light weight, of small volume and can make the obtained devices foldable, easy to carry. High conductivity of CdS films was also achieved by controlling the film morphology. However, as far as can be ascertained, the switching property of the photo-response has not been studied in the large area CdS films with a photo-resistance below 200 /square at a visible light. However, for the photo-sensor application, the switching properties of the photo-response should be studied in detail. In the present study, an enhancement of the photoresponse switching of the CdS films was achieved by an applicat...