A novel stable zinc–oxo cluster for advanced lithography patterning

Si, Youming; Zhao, Yingdong; Shi, Guangyue; Zhou, Danhong; Luo, Feng; Chen, Pengzhong; Fan, Jiangli; Peng, Xiaojun

doi:10.1039/d3ta00115f

Cited by 12 publications

(12 citation statements)

References 46 publications

(54 reference statements)

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“…Additionally, the sensitivity of the Zn‐PBBA resist was analyzed by exposure to EBL doses ranging from 100 to 1500 μC cm −2 , as illustrated in Figure S10, and a sensitivity of 600 μC cm −2 was achieved. The resolution of the Zn‐PBBA photoresist is on par with the previously reported Zn‐VBA, indicating its potential application 40 …”

Section: Resultssupporting

confidence: 52%

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Structural investigation of zinc‐based photoresists with different substituents for high‐resolution lithography

Luo

Liu

et al. 2023

Applied Organom Chemis

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The fineness of the photolithographic pattern depends largely on the composition and structure of the photoresist, and different structures endow metal‐based photoresists with different photon‐absorbing capabilities. Here, we synthesized zinc‐based photoresists with different electron‐effect substituents (amine and bromine) in the ligands and investigated the influence of the ligand groups on the sensitivity and resolution at deep ultraviolet and electron beam. The developed resist patterns exhibit that the sensitivity of the Zn‐based photoresists containing bromine groups (Zn‐PBBA) is nearly seven times higher than the Zn‐based photoresists containing amine groups (Zn‐PABA) at the same resolution under ultraviolet irradiation, which is supported by the density functional theory (DFT) calculations where a smaller HOMO–LUMO gap for Zn‐PBBA is obtained. Analogously, the Zn‐PBBA also showed better sensitivity and resolution than Zn‐PABA at EBL, with a resolution of 70 nm at a dose of 800 mJ cm−2 by characterization with AFM. This work provides an understanding of the efficient structural design of photoresists and future guidance for the development of better‐performing materials.

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Section: Resultssupporting

confidence: 52%

“…The resolution of the Zn-PBBA photoresist is on par with the previously reported Zn-VBA, indicating its potential application. 40…”

Section: Ebl Exposurementioning

confidence: 99%

Structural investigation of zinc‐based photoresists with different substituents for high‐resolution lithography

Luo

Liu

et al. 2023

Applied Organom Chemis

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“…Numerous non-CARs based on self-immolative polymers like poly(olefin sulfones), polyesters, and polyacetals, – metal-containing clusters, – metal–organic complexes, – and thiol–ene click reaction, have been developed and studied extensively in recent years, achieving patterns with line widths down to 4 nm. Moreover, novel non-CARs based on copolymers containing a radiation-sensitive sulfonium functionality have been reported.…”

Section: Introductionmentioning

confidence: 99%

Nonchemically Amplified Molecular Resists Based on Sulfonium-Functionalized Sulfone Derivatives for Sub-13 nm Nanolithography

Wang,

Chen,

Zeng

et al. 2023

ACS Appl. Nano Mater.

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In this study, a series of molecular resists based on a bis(4-butoxyphenyl) sulfone core attached to a varying number of radiation-sensitive triphenylsulfonium units (BPSSn, where n = 2, 3, and 4) were designed and synthesized. We evaluated the physical properties of these resists, including solubility, film-forming ability, and thermal stability, to assess their viability as photoresist materials. The materials allowed for negative patterning through organic development in both e-beam and extreme ultraviolet (EUV) lithography. Through manipulating the average number of triphenylsulfonium units in the molecule and optimizing the developing agents, BPSS4 resists demonstrated high resolution (16/13 nm) and low line edge roughness (2.5/2.5 nm) in e-beam and EUV dense line patterning, respectively. We further explored the EUV and e-beam exposure mechanisms of BPSS4 resist using X-ray photoelectron spectroscopy. We also investigated the outgassing behavior of the film during EUV irradiation via in situ mass spectroscopy. Remarkably, this nonchemically amplified resist exhibited high etch resistance and accurate pattern transfer capabilities. The etch durability of BPSS4 (under SF6/O2 plasma chemistry) with respect to the Si wafer was 21:1, highlighting its significant potential for practical applications in high-resolution lithography.

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“…SAXS is exploited by Antonio et al to study the solution behaviors of Keggin type POMs and the structure factor S q ð Þ is used to accurately identify the interaction potential. [54] Two correlation peaks (P 1 and P 2 ) can be observed from the S q ð Þ plot of P-HPA ([PW 12 O 40 ] 3À ), while only P 1 peak appears for Si-HPA ([SiW 12 O 40 ] 4À ), and Al-HPA ([AlW 12 O 40 ] 5À ) (Figure 4b). The P 1 peak of Si-HPA and Al-HPA solutions corresponds to a correlation distance of 14.6 Å, which is larger than the sizes of Keggin type POMs.…”

Section: Mocs and Their Assembliesmentioning

confidence: 99%

“…Over four days of evaporation prior to crystallization, the SAXS remained invariant, suggesting a mixture of cluster fragments much smaller than the fully-formed pentagonal shaped Zr Aluminium Keggin ions, i.e. Al 13 (AlO 4 Al 12 (OH) 24 -(H 2 O) 12 7 + ) are amongst the most studied polyoxocations for developing aqueous reactivity and speciation diagrams, building blocks for materials, and commercial products in water treatment and personal care. [85] Given the similarities between aqueous Al 3 + and Cr 3 + , there were early attempts to isolate a Cr 13 analogue.…”

Section: Spatiotemporal Studies Of Complex Nanostructures 321 Reactio...mentioning

confidence: 99%

Spatiotemporal Studies of Soluble Inorganic Nanostructures with X‐rays and Neutrons

Yin,

Amidani,

Chen

et al. 2023

Angew Chem Int Ed

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This review addresses the use of X‐ray and neutron scattering and X‐ray absorption to describe how inorganic nano‐structured materials assemble, evolve, and function in solution. We first provide an overview of techniques and instrumentation (both large user facilities and benchtop). We review recent studies of soluble inorganic nanostructure assembly, covering the disciplines of materials synthesis, processes in nature, nuclear materials, and the widely applicable fundamental processes of hydrophobic interactions and ion‐pairing. Reviewed studies cover size regimes and length scales ranging from sub‐angstrom (coordination chemistry and ion‐pairing) to several nanometers (molecular clusters; i.e. polyoxometalates, polyoxocations and metal‐organic polyhedra), to meso‐scale (supramolecular assembly processes). Reviewed studies predominantly exploit 1) SAXS/SWAXS/SANS (small and wide angle X‐ray or neutron scattering), 2) PDF (pair distribution function analysis of X‐ray total scattering), and 3) XANES and EXAFS (respectively X‐ray absorption near edge structure and extended X‐ray absorption fine structure). While the scattering techniques provide structural information, X‐ray absorption yields oxidation state, in addition to local coordination. Our goal for this review is to provide information and inspiration for the inorganic/materials science communities that may benefit from elucidating the role of solution speciation in natural and synthetic processes.

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A novel stable zinc–oxo cluster for advanced lithography patterning

Abstract: Recently, the development of novel metal-containing resists has received much attention in extreme ultraviolet lithography (EUVL) owing to their smaller sizes and higher EUV absorptivity than traditional polymer resists. Herein,...

Cited by 12 publications

References 46 publications

Structural investigation of zinc‐based photoresists with different substituents for high‐resolution lithography

Structural investigation of zinc‐based photoresists with different substituents for high‐resolution lithography

Nonchemically Amplified Molecular Resists Based on Sulfonium-Functionalized Sulfone Derivatives for Sub-13 nm Nanolithography

Spatiotemporal Studies of Soluble Inorganic Nanostructures with X‐rays and Neutrons

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