2018
DOI: 10.1007/s10825-018-1128-6
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A novel Schottky contact super barrier rectifier with a top N-enhancement layer and a P-injector

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Cited by 4 publications
(1 citation statement)
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“…The compound BaPd 2 As 2 in the focus of this article represents the end member of the Pd-doped series and exists in the form of two types of crystal structures: ThCr 2 Si 2 -structure type (I4/mmm) and CeMgSi 2 -structure type (P4/mmm) [11,12]. The former structure has bulk superconductivity with T c = 3.85 K, while in the latter structure only filamentary superconductivity was observed below 2 K. This shows that the crystal structure has a predominant effect on the superconducting prop-erties of these systems [14][15][16]. Given that Fe likely has a leading effect on the high temperature superconductivity in doped BFA, the effect of partial substitution of Fe on superconducting properties in general, and on their anisotropy evolution remains unaddressed.…”
Section: Introductionmentioning
confidence: 99%
“…The compound BaPd 2 As 2 in the focus of this article represents the end member of the Pd-doped series and exists in the form of two types of crystal structures: ThCr 2 Si 2 -structure type (I4/mmm) and CeMgSi 2 -structure type (P4/mmm) [11,12]. The former structure has bulk superconductivity with T c = 3.85 K, while in the latter structure only filamentary superconductivity was observed below 2 K. This shows that the crystal structure has a predominant effect on the superconducting prop-erties of these systems [14][15][16]. Given that Fe likely has a leading effect on the high temperature superconductivity in doped BFA, the effect of partial substitution of Fe on superconducting properties in general, and on their anisotropy evolution remains unaddressed.…”
Section: Introductionmentioning
confidence: 99%