A novel precursor towards buffer layer materials: the first solution based CVD of zinc oxysulfide

Bhide, Malavika A.; Carmalt, Claire J.; Knapp, Caroline E.

doi:10.1039/d0tc00840k

Cited by 13 publications

(11 citation statements)

References 41 publications

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“…The Zn 2p 3/2 and 2p 1/2 states appeared at 1044.2 and 1021.2 eV respectively and one S environment was present, with 2p 3/2 and 2p 1/2 states appearing at 162.8 and 161.5 eV respectively, in accordance to previous reports from the literature for Zn(O,S) films. 26 One oxygen environment appeared at 529.5 eV for the 1s state, whilst a hydroxide state also appeared at 531.1 eV. There was however a change in binding energies for the surface scan as compared to the 300 s etch.…”

Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

“…This was consistent with reports from the literature for zinc oxysulfide films. 26,41,42 Film C was visibly yellow in colour. X-ray photoelectron spectroscopy confirmed the presence of zinc, sulfur and oxygen in the film (ESI).…”

Section: Aacvd Experimentsmentioning

confidence: 99%

“…From elemental ratios, it was found that the S/Zn ratio on the surface was 1.73, indicating a sulfur rich environment as evidenced by absence of an oxygen environment, as well as a shift towards higher binding energies, whilst the S/Zn ratio for the bulk material (300 s etch) was calculated to be 0.40, in line with observed results. Previous work has shown that for zinc oxysulfide films produced via AACVD which have a S/Zn ratio above 0.13, 26 Hall effect data cannot be acquired due to the high resistivities of the films. The as-deposited films presented here have a high S/Zn ratio on the surface, therefore electronic data could not be acquired for film C. It has been previously reported that the elongated grain structure exhibited in ZnO films is reduced upon inclusion of S, 42 and whilst exchange of O with S in the lattice sites of Zn(O,S) alters conductivity, there is a point at which lattice sites predominantly occupied by S will result in films that are not conductive.…”

Section: Aacvd Experimentsmentioning

confidence: 99%

“…It has been shown in the literature that the CVD of zinc complexes with a chelating ligand containing both an O-and Sdonor atom such as thiobiuret ligands or thioacetate ligands serve as precursors towards the metal sulfide only, with no oxygen incorporation unless an external oxygen source is used. 25,26 Recently, nitrogen-doped molybdenum disulfide (N-MoS2) was deposited via CVD from the monomeric heteroleptic imido-thiolato precursor Mo(N t Bu)2(S t Bu)2, which contains two different ligands bound to the molybdenum centre, one being a nitrogen source and the other being a sulfur source. 27 The film had optoelectronic properties comparable to those of N-MoS2 films grown via dual source methods.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

et al. 2021

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Section: Aacvd Experimentsmentioning

confidence: 99%

Section: Aacvd Experimentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

et al. 2021

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Enhancement of Cd‐Free All‐Dry‐Processed Cu(In_1‐x,Ga_x)Se₂ Thin‐Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn_1‐_xMg_xO Buffer

Park,

Jo,

Cho

et al. 2024

Energy & Environ Materials

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Attempts to remove environmentally harmful materials in mass production industries are always a major issue and draw attention if the substitution guarantees a chance to lower fabrication cost and to improve device performance, as in a wide bandgap Zn1‐xMgxO (ZMO) to replace the CdS buffer in Cu(In1‐x,Gax)Se2 (CIGSe) thin‐film solar cell structure. ZMO is one of the candidates for the buffer material in CIGSe thin‐film solar cells with a wide and controllable bandgap depending on the Mg content, which can be helpful in attaining a suitable conduction band offset. Hence, compared to the fixed and limited bandgap of a CdS buffer, a ZMO buffer may provide advantages in Voc and Jsc based on its controllable and wide bandgap, even with a relatively wider bandgap CIGSe thin‐film solar cell. In addition, to solve problems with the defect sites at the ZMO/CIGSe junction interface, a few‐nanometer ZnS layer is employed for heterojunction interface passivation, forming a ZMO/ZnS buffer structure by atomic layer deposition (ALD). Finally, a Cd‐free all‐dry‐processed CIGSe solar cell with a wider bandgap (1.25 eV) and ALD‐grown buffer structure exhibited the best power conversion efficiency of 19.1%, which exhibited a higher performance than the CdS counterpart.

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Boosting Electrochemical Activity of Porous Transparent Conductive Oxides Electrodes Prepared by Sequential Infiltration Synthesis

Kim

Jeon

2022

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The decoration of the TCO electrode surface with chemical species serving as a charge transfer mediator, electrochemical tag, or electrocatalyst is a widely employed strategy to realize desirable electrochemical properties in electrodes. [11][12][13] Recent progress in the fabrication of porous TCO electrodes has rendered the surface modification scheme more successful by maximizing the loading of the functional redox species onto the porous electrodes with a high surface area. [14,15] Given that the mass transport of the electrolyte species to the electrode is not restricted, surfacemodified porous electrodes will enable more efficient electron transfer, thereby increasing the efficiency of electrochemical and bioelectrochemical devices. [11][12][13] In addition, the high surface area of porous electrodes is anticipated to facilitate the miniaturization of devices owing to their increased implantable capability. [16,17] Numerous approaches have been proposed for the fabrication of porous transparent electrodes, including nanoparticle casting, [18,19] salt precursor deposition, [20,21] etching, [19,22] and electrospinning. [23] Casting a nanoparticle via dip coating or spin coating is a low-cost, simple method to prepare porous TCOs. However, it cannot easily achieve precise control over the pore morphology, such as the pore size and size distribution. [10] TCOs of organized structures with a controlled morphology can be realized via template deposition methods, which exploit the self-assembly of soft templates, such as molecular cationic surfactant templates [24,25] or block copolymers, [20,26] with a solution of soft templates containing precursor salts for oxide formation. In this study, we employed sequential infiltration synthesis (SIS) as a new approach to fabricate porous TCO electrodes. SIS has recently emerged as a novel and attractive approach for the fabrication of inorganic-organic hybrid films and porous templated films.SIS is similar to template deposition methods in that both methods require polymer films spun on a substrate. However, the growth mechanisms of SIS differ from those of soft template deposition methods. The key mechanisms involved in SIS are as follows: 1) Infiltration of gas-phase precursor molecules into the polymer matrix, 2) coordination of the precursor molecules with a specific functional group of the polymer, and 3) a chemical reaction between the infiltrated precursor molecules Sequential infiltration synthesis (SIS) is an emerging technique for producinginorganic-organic hybrid materials and templated inorganic nanomaterials. The application space for SIS is expanding rapidly in areas such as litho graphy, filtration, photovoltaics, antireflection, and triboelectricity, but not in the field of electrochemistry. This study performs SIS for the fabrication of porous, transparent, and electrically conductive films of indium zinc oxide (IZO) to evaluate their potential as an electrode for electrochemistry. The elec trochemical activity of IZOcoated electrodes is evaluated when th...

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A novel precursor towards buffer layer materials: the first solution based CVD of zinc oxysulfide

Cited by 13 publications

References 41 publications

Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

Enhancement of Cd‐Free All‐Dry‐Processed Cu(In_1‐x,Ga_x)Se₂ Thin‐Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn_1‐_xMg_xO Buffer

Boosting Electrochemical Activity of Porous Transparent Conductive Oxides Electrodes Prepared by Sequential Infiltration Synthesis

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A novel precursor towards buffer layer materials: the first solution based CVD of zinc oxysulfide

Cited by 13 publications

References 41 publications

Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

Synthesis, solution dynamics and chemical vapour deposition of heteroleptic zinc complexes via ethyl and amide zinc thioureides

Enhancement of Cd‐Free All‐Dry‐Processed Cu(In1‐x,Gax)Se2 Thin‐Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn1‐xMgxO Buffer

Boosting Electrochemical Activity of Porous Transparent Conductive Oxides Electrodes Prepared by Sequential Infiltration Synthesis

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Resources

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Enhancement of Cd‐Free All‐Dry‐Processed Cu(In_1‐x,Ga_x)Se₂ Thin‐Film Solar Cells by Simultaneous Adoption of an Enlarged Bandgap Absorber and Tunable Bandgap Zn_1‐_xMg_xO Buffer