Graphene, as a typical example of 2D material, has carbon atoms arrayed in a hexagonal network and is only an atom thick. [1,2] Since October 2004, the successful preparation of graphene films by mechanical exfoliation method, [3] its attractive wideband absorption, and mechanical properties [4,5] have aroused further theoretical and experimental research. [6] Graphene is a gapless semiconductor with ultra-high carrier mobility, which can exceed 15 000 cm 2 V À1 s À1 even at room temperature, [7] and makes it could interact strongly with light from microwave to ultraviolet wavelengths and exhibits an extraordinary optical response, such as broadband optical modulators, ultrafast photodetectors, [8,9] and transparent conductive sheets. [10] Except for the above, graphene has very impressive elastic properties, [11] thermal conductivity, [12] and other properties. However, the zero bandgap will also lead to an unsatisfactory high turn-off current and a very low on/off current ratio, which may hinder its application in fieldeffect transistors. [8,13] Thus, the continued theoretical and experimental studies of searching for novel 2D semiconducting materials are rewarding. Recently, the group V monolayer [14] received increasing research attention. As typical graphene-like materials, group VA 2D materials also arouse broad interest because of their unique electronic properties and stability. [15,16] For example, arsenene is an indirect semiconductor with a bandgap of arsenene is 2.49 eV, which corresponds to the blue-light spectral range, making it a promising material in blue-light detectors, [16] LEDs, etc. Both As and Sb belong to group V and have the same outer shell electron distribution. The Sb ranks below As in the periodic table, so it has better chemical stability.In addition to single-layer materials consisting of a single group, the layered binary compounds have also received increasing research attention, such as III-V, II-IV, II-VII, II-VI, III-VI, IV-V [14,[17][18][19][20][21][22][23][24][25][26][27][28][29] compounds, and single layers of group III, [27,30] group IV monochalcogenides. [31,32] Huang et al. theoretically identified several possible structures for the Si x P y (y/x ≥ 1) monolayer, where the predicted A 2 B 2 -type SiP monolayer of the P-6m2 space group has a similar or even lower formation enthalpy than its bulk. [33] This result has also attracted researchers to study other compounds with this structure, particularly IV-V compounds. The good stabilities of IV-V compounds (IV = C, Si, Ge, Sn, Pb; V = N, P, As, Sb, Bi) with a hexagonal honeycomb structure were confirmed by later Özdamar et al. theoretically. [34] Moreover, the XSb (X = Si, Ge, Sn) monolayer was found to have very good thermal and dynamic stability. [16,[35][36][37][38][39][40] These crossover compounds of different main group elements have very good semiconductor properties, and they have great potential in other areas such as thermal, optical, and electronic devices. The bandgap and structural and electronic properties of ...