A novel MOS device structure with S/D contacts over oxide (COO)

Dennison, C.; Wu, AM（重点实验室）; Ko, P.K.; Drowley, C.I.; Bradbury, D.R.

doi:10.1109/iedm.1985.190931

Cited by 8 publications

(3 citation statements)

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“…Reaction chemistry.--The chemJstry and kinetics of the selective epitaxial silicon growth process are well documented in the literature./2-i4 It is well known that the SiH2C12 feed gas decomposes rapidly in the reactor to form SIC12 by the reaction SiH2C12(g) ~ SiC12(g) + H2(g) [1] Using inelastic light scattering Smith and Sedgewick ~ were the first to verify that SIC12 is the primary species responsible for silicon growth. Silicon growth from an Si-H-C1 chemistry takes place by the following series of reactions SiC12(g) --> SIC12* [2] SiCI~* + H2(g) -~ Si(cr) + 2HCI(g) [3] I@8.0@ :1 75.~ 0 E 2S, @@ 25. I~ where * denotes adsorption at an energetically favorable silicon surface site.…”

Section: Discussionmentioning

confidence: 99%

Selectivity Mechanisms in Low Pressure Selective Epitaxial Silicon Growth

Fitch

1994

J. Electrochem. Soc.

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Selective silicon processing at 775 and 850~ using an SiH2C1JHC1/H2 based chemistry was studied. The selectivity of 2 each experimental condition was quantified by measuring the silicon nuclei density/cm on large blanket areas of SiO2. The morphology of the selective silicon films was examined for texture and hillocks. The roles of water vapor and atomic hydrogen on the microchemistry of an SiO2 surface was investigated. Thermodynamic modeling of the effect of different atmospheric leak rates on the water vapor and atomic hydrogen concentrations was carried out with the aid of the SOLGAS program. A new understanding of selectivity is proposed. An SiO2 surface is an interruption of the bulk continuous random network structure and, as such, has a characteristic density of defect sites. The degree of selectivity observed is determined by the type of species which terminate these defect sites, i.e., by the number of defect sites which are not chemically passivated against the adsorption of silicon species. A universal selective silicon processing regime is predicted and good agreement with a wide range of published selective silicon processes is shown.

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Section: Discussionmentioning

confidence: 99%

Selectivity Mechanisms in Low Pressure Selective Epitaxial Silicon Growth

Fitch

1994

J. Electrochem. Soc.

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“…PE-CVD SiN= has been used for the gate and passivation insulators in a-Si:H TFTs (2)(3)(4). In order to avoid surface bombardment of the a-Si:H layer by energetic plasma species, which include a high proportion of nitrogen-related impurities (5), the inverted-staggered structure has been employed for a-Si:H TFTs.…”

Section: Sumitomo Metal Industries Limited Advanced Technology Reseamentioning

confidence: 99%

“…Thus the active MOS transistor lies within the lowdefect portion of the recrystallized film. In previous studies (2,3), NMOS transistors were fabricated in seeded epitaxially grown areas in silicon films over oxide, although no attempt was made to recrystallize the polysilicon source/drain regions directly over the oxide. This can result in increased parasitic source/drain resistance and reduced device gain compared to SPIRRIT transistors.…”

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confidence: 99%

A Complementary Metal Oxide Semiconductor Process in Epitaxially Regrown Silicon over Oxide

Leung

Cole

Cobert

et al. 1991

J. Electrochem. Soc.

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A new solid-phase epitaxy technique, solid-phase isolated regrowth for radiation-immune technology (SPIRRIT), is described that has speed, density, and radiation-immunity advantages over bulk Si circuit technologies. Partial isolation between source and drain areas and substrate is achieved by incorporating a buried oxide layer into the metal oxide semiconductor (MOS) structures during complementary metal oxide semiconductor (CMOS) processing. Seeded epitaxial regrowth of an amorphized silicon film creates the active transistor channels. Rutherford backscattering and x-ray diffraction measurements indicate that the current amorphization and recrystallization process yields crystalline material to a depth of 0.2 vm, with some residual subsurface damage in the depth range from 0.2 to 0.5 ~m. PMOS SPIRRIT transistors have demonstrated near-bulk performance. NMOS SPIRRIT transistors displayed high transconductances, but also exhibited large leakage currents. The leakage is attributed to a spurious donor region in the recrystallized film.Silicon on insulator (SOD integrated circuit technologies have potential advantages in speed, packing density, and power dissipation compared to conventional bulk approaches, resulting from the reduced junction areas and the ideal isolation provided by the insulating substrate. In addition, SOI technologies are attractive for space applications, due primarily to their inherent radiation immunity. However, the complexities of material preparation for many SOI technologies can add considerably to chip costs and may introduce additional device failure modes, thereby reducing circuit reliability. The solid phase isolated regrowth for radiation immune technology (SPIR-RIT) technique, currently under study at The Aerospace Corporation, is an alternative to SOI technologies. It addresses these issues by incorporating a buried oxide into the MOS transistor structure during CMOS processing. The SPIRRIT fabrication sequence employs CMOS-c0m-patible process steps such as localized oxidation of silicon (LOCOS), polysilicon deposition, silicon ion implantation, and thermal annealing to form transistors with source and drain areas that are isolated from the bulk silicon substrate by a buried oxide. The SPIRRIT technique is compatible with standard production equipment and procedures. It requires a low-pressure chemical vapor deposition (LPCVD) reactor for film deposition, an ion implanter for amorphization, and a furnace for annealing the film. In other respects, it utilizes conventional CMOS processing procedures. In this way, the speed, density, and radiation immunity improvements over bulk CMOS technologies can be realized without substantial cost or complexity penalties. This method therefore appears to be a promising approach for production.Cross-sectional and plan views of the SPIRRIT structure are shown in Fig. 1. The channel of the MOS device is fabricated over the seed window and electrically connected to the buried shield through the seed. The source and drain regions are formed in the th...

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MONO/POLY technology for fabricating low-capacitance CMOS integrated circuits

Ipri

Jastrzȩbski

1988

IEEE Trans. Electron Devices

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A novel MOS device structure with S/D contacts over oxide (COO)

Cited by 8 publications

References 1 publication

Selectivity Mechanisms in Low Pressure Selective Epitaxial Silicon Growth

Selectivity Mechanisms in Low Pressure Selective Epitaxial Silicon Growth

A Complementary Metal Oxide Semiconductor Process in Epitaxially Regrown Silicon over Oxide

MONO/POLY technology for fabricating low-capacitance CMOS integrated circuits

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