A novel morphology of SiO x nanowires with a modified diameter

Chen, Y.J.; Li, J.B.; Han, Yongsheng; Wei, Qing; Dai, Jianhui

doi:10.1007/s003390101043

Cited by 12 publications

(5 citation statements)

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“…The most unexpected result from the above experiments was the formation of the amorphous SiO x nanowires on Au-coated substrates. These results were quite different from those reported in the literature, where the SiO x nanowires were formed at higher temperature and for longer reaction time. − To understand the growth mechanism of SiO x nanowires, we have performed a systematic investigation on how the nanowire formation depends on the growth conditions.…”

Section: Resultsmentioning

confidence: 57%

“…The majority of SiO x nanowire fabrication methods are catalyst-based methods. Different kinds of catalysts have been used, such as Au, − Fe, − Co, , Ni, Ge, − and other metal alloys . In most cases, the formation of SiO x nanowires has been attributed to a vapor−liquid−solid mechanism: a nanocluster serves as the critical point for nucleation, and the addition of reactants from the vapor phase allows the formation of a nanowire underneath the catalyst cluster.…”

Section: Introductionmentioning

confidence: 99%

“…One-dimensional SiO x nanowires have recently attracted considerable research attention due to their unique optical properties and promising applications. − The stable and bright blue emission of SiO x nanowires makes them potential sources of high-intensity light, near-field optical microscope probes, waveguides, etc. So far, many different methods have been employed to fabricate these nanowires, and different growth mechanisms have been proposed.…”

Section: Introductionmentioning

confidence: 99%

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Carbon-Assisted Growth of SiO_x Nanowires

Zhu

Zhao

2004

J. Phys. Chem. B

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During attempts to fabricate ZnO nanowires, we accidentally observed the growth of SiO x nanowires on Au-coated Si substrate. Detailed characterizations on the resulting nanowires were carried out by field-emission scanning electron microscopy, electron microprobe analysis, transmission electron microscopy, selective area electron diffraction, energy-dispersed X-ray spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The resulting nanowires have a Si-to-O ratio of 1:1.63 and a diameter of 50−300 nm. It was found that the presence of graphite powder in the growth furnace was critical. A systematic investigation of how the growth conditions, such as the growth temperature, the oxygen-to-Ar carrier gas ratio, and growth time, affect the formation of SiO x nanowires was performed. Higher growth temperature and appropriate low oxygen gas flow helped to promote long nanowire growth. The diameters of the nanowires increased with growth time. It was demonstrated that the formation of the SiO x nanowires was due to a solid−liquid−solid mechanism, and the locally catalytic oxidation of CO by Au nanoclusters may play a role in accelerating nanowire formation.

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Section: Resultsmentioning

confidence: 57%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Carbon-Assisted Growth of SiO_x Nanowires

Zhu

Zhao

2004

J. Phys. Chem. B

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“…Recently, the fabrication of silicon oxide (SiO x ) nanowires was carried out by several synthetic methods, including thermal evaporation [9,10], chemical vapour deposition 1 Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

“…They found that the formation of the SiO x nanowires depended on a series of experimental conditions including substrate coating (Au), the presence of graphite powder, the substrate temperature, the oxygen flow rate and the growth time. Chen et al have reported the synthesis of SiO 2 nanowires with a modified diameter via a thermal evaporation method by heating pure silicon powder at 1373 K followed by a catalyst-coated substrate [9]. According to the reports, the formation of SiO x nanowires still required complex experimental conditions and participation of catalysts such as Au, Fe, Co, Ni, Ge, Pb and other metal alloys [20,21].…”

Section: Introductionmentioning

confidence: 99%

Field-emission properties of the platinum coated SiO₂nanowires synthesized by thermal evaporation method

Chiu¹,

Li²

2008

J. Phys. D: Appl. Phys.

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Silicon oxide (SiO2) nanowires were synthesized on a 3 cm × 3 cm Si wafer by thermal evaporation of Si@SiO2 core–shell particles under argon atmosphere at 1000 °C for 1 h. The SiO2 nanowires were of diameters ranging from 30 to 100 nm and the lengths were of several micrometres. The growth mechanism of SiO2 nanowires was studied and suggested to be a vapour–solid mechanism. Field-emission (FE) properties of the Pt coated SiO2 nanowires were studied and the result showed that a turn-on electric field of 2.9 V µm−1 was obtained at the vacuum gap of 200 µm. Good FE properties of the Pt coated SiO2 nanowires resulted from the high aspect ratio of the SiO2 nanowires and the excellent work function of platinum.

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Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation

Dai

Pan

Wang³

2003

Adv Funct Materials

1,134

693

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Functional oxides are the fundamentals of smart devices. This article reviews novel nanostructures of functional oxides, including nanobelts, nanowires, nanosheets, and nanodiskettes, that have been synthesized in the authors’ laboratory. Among the group of ZnO, SnO2, In2O3, Ga2O3, CdO, and PbO2, which belong to different crystallographic systems and structures, a generic nanobelt structure has been synthesized. The nanobelts are single crystalline and dislocation‐free, and their surfaces are atomically flat. The oxides are semiconductors, and have been used for fabrication of nanodevices such as field‐effect transistors and gas sensors. Taking SnO2 and SnO as examples, other types of novel nanostructures are illustrated. Their growth, phase transformation, and stability are discussed. The nanobelts and related nanostructures are a unique group that is likely to have important applications in electronic, optical, sensor, and optoelectronic nanodevices.

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A novel morphology of SiO x nanowires with a modified diameter

Cited by 12 publications

References 0 publications

Carbon-Assisted Growth of SiO_x Nanowires

Carbon-Assisted Growth of SiO_x Nanowires

Field-emission properties of the platinum coated SiO₂nanowires synthesized by thermal evaporation method

Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation

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A novel morphology of SiO x nanowires with a modified diameter

Cited by 12 publications

References 0 publications

Carbon-Assisted Growth of SiOx Nanowires

Carbon-Assisted Growth of SiOx Nanowires

Field-emission properties of the platinum coated SiO2nanowires synthesized by thermal evaporation method

Novel Nanostructures of Functional Oxides Synthesized by Thermal Evaporation

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Product

Resources

About

Carbon-Assisted Growth of SiO_x Nanowires

Carbon-Assisted Growth of SiO_x Nanowires

Field-emission properties of the platinum coated SiO₂nanowires synthesized by thermal evaporation method