“…Wet etching process for Si tips using tetramethylammonium hydroxide (TMAH), KOH, or HF: HNO 3 : CH 3 COOH mixed solutions is simple and low-cost [ 26 , 27 , 28 , 29 , 30 , 31 ]. However, wet etching using TMAH and KOH has a high crystal orientation dependency and requires extremely precise alignment with the mask [ 28 , 29 ]. In the HF: HNO 3 : CH 3 COOH etching method it is difficult to control the process and maintain a stabilized etch rate [ 31 ].…”