A novel method for the fabrication of integrated passive devices on SI-GaAs substrate

A chip-on-board packaged bandpass filter using cross-coupled topological optimised hairpin resonators for X-band radar application

“…The substrate is a conventional 6-inch 400-μm thick GaAs wafer. This substrate is advantageous because it avoids the capacitive and inductive loading of other conductive substrates used for high-speed microwave applications [23][24]. It features a good permittivity of 12.85, and a loss tangent of 0.006.…”

Very compact differential transformer-type bandpass filter with mixed coupled topology using integrated passive device technology

“…Several conventional technologies, such as printed circuit boards and low-temperature co-fired ceramic technology, cannot meet the requirements for this continuing trend [1,2]. Along with the advent of integrated passive device (IPD) technology, the above-mentioned issues were skillfully conquered, and IPD technology offered compatibility with active devices to make an essential system in both a package and a system on chip [3][4][5][6]. Furthermore, the bandpass filter (BPF) is an essential device in wireless and mobile communication systems.…”

Ultra-smooth BaTiO3 surface morphology using chemical mechanical polishing technique for high-k metal-insulator-metal capacitors

“…These capacitors are also compatible with semiconductor processes and are therefore an essential technology for system-inpackage and system-on-chip developments, which are expected to be key next-generation system implementation approaches [3,4]. Conventionally, SiN x (e r ¼7.5) and SiO 2 (e r ¼3.7) are used as dielectric materials in the design of MIM capacitors because of their good voltage linearity properties and low temperature coefficients [1].…”