A novel lateral bipolar transistor with 67 GHz f/sub max/ on thin-film SOI for RF analog applications

Nii, H.; Yamada, Takashi; Inoh, K.; Shino, T.; Kawanaka, S.; Yoshimi, M.; Katsumata, Y.

doi:10.1109/16.848304

Cited by 57 publications

(14 citation statements)

References 9 publications

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“…Before the development of Horizontal Current Bipolar Transistor (HCBT) [1], Lateral Bipolar Transistors (LBTs) [2] had high-frequency characteristics inferior to the characteristics of vertical-current silicon BJTs [3], and especially to SiGe HBTs [4]. Due to the optimized doping profile of the intrinsic transistor region, HCBT has the characteristics comparable to the state-of-the-art Si BJTs, suitable for the sub-10 GHz wireless communication applications.…”

Section: Introductionmentioning

confidence: 99%

Collector region design and optimization in Horizontal Current Bipolar Transistor (HCBT)

Suligoj

Koricic

Mochizuki

et al. 2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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Three different types of the n-collector region of Horizontal Current Bipolar Transistor (HCBT) are analyzed and compared. The optimum ncollector profile suppresses the charge sharing effect between the intrinsic and extrinsic base regions, resulting in the uniform base width and electric field in the intrinsic transistor. This implies a maximum BV CEO and an optimum f T BV CEO product among compared structures. The HCBT with a selectively implanted collector (SIC) is introduced and examined. It reduces R C and increases f T comparing to the other n-collector designs. The analyses give the guidelines for the optimum HCBT design for targeted applications.

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Section: Introductionmentioning

confidence: 99%

Collector region design and optimization in Horizontal Current Bipolar Transistor (HCBT)

Suligoj

Koricic

Mochizuki

et al. 2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

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“…However, for radio frequency (RF) applications, BJT is still superior to MOSFET for its well-behaved characteristics. Thus, many BJT based novel devices such as SiGe HBT, SiGe BiCMOS [1][2][3], and SOI lateral BJT [8][9][10] have been developed. Nevertheless, these devices suffer also the drawback of complicated fabrication processes, and thus resulting in a high preparing cost.…”

Section: Introductionmentioning

confidence: 99%

A high current gain gate-controlled lateral bipolar junction transistor with 90nm CMOS technology for future RF SoC applications

Chen

Fang

Yeh

et al. 2008

Solid-State Electronics

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“…Among all the candidates, a lateral bipolar junction transistor (LBJT) on Si on insulator (SOl) is a promising one to satisfy this requirement [1]. Furthermore, the characteristics of LBJT-on-SOI, such as high speed and low power consumption, can be improved by applying strain.…”

Section: Introductionmentioning

confidence: 99%

Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation

Wang

Yang

Morioka

et al. 2008

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

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UV laser excited microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes (FSSMs), which can be applied to the fabrication of high performance radiofrequency (RF) power amplifier. The FSSMs were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure chemical vapor deposition. By the optimization of optics, we successfully observed PLs for FSSMs by a 325 nm laser excitation, which eliminated the substrate-related PL (S-PL) and improved the accuracy of the identification for PL peaks. Strain-induced band gap narrowing was directly observed by identifying the PL peak of the free exciton band-band transition in membranes, from which the strain ratio was estimated for each sample. Strain was reasonably dependent on the sample parameters, which implies that this measurement gives valid results. Based on the improved accuracy of PL peak identification by a UV laser excitation, a minor revision of the strain ratio results was also performed for our previous report for the same samples, which were measured by a 514 om laser excited PL.

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A novel lateral bipolar transistor with 67 GHz f/sub max/ on thin-film SOI for RF analog applications

Cited by 57 publications

References 9 publications

Collector region design and optimization in Horizontal Current Bipolar Transistor (HCBT)

Collector region design and optimization in Horizontal Current Bipolar Transistor (HCBT)

A high current gain gate-controlled lateral bipolar junction transistor with 90nm CMOS technology for future RF SoC applications

Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser excitation

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