A Novel Ku-Band RTD-Based Quadrature VCO for Low Power Applications

Kim

2017

Sci Rep

High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p+-i-n+ Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate-modulation of the electrostatic junction characteristics along source-channel-drain. The largest peak-to-valley current ratio of the Λ-NDT peak is greater than 104, the smallest full-width at half-maximum is smaller than 170 mV, and the best swing-slope at the Λ-NDT peak region is ~70 mV/dec. The position and the current level of the Λ-NDT peaks are systematically-controllable when modulating the junction characteristics by controlling only bias voltages at gate and/or drain. These unique features allow us to demonstrate the multivalue logic functions such as a tri-value logic and a quattro-value logic. The results suggest that the present type of the Si Λ-NDT device could be prospective for next-generation arithmetic circuits.

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device

Kim

2017

Sci Rep

“…In Fig. 8, the previously reported RTDs with emitter areas of 0.36 [23], 1 [24], and 4.14 μm 2 [25] and RTDs with areas of 2 and 9 μm 2 , fabricated in this work, were used. P MAX−OUT values were calculated from the following equation [26]:…”

Section: Fig 5 Extracted Capacitance Per Junction Area Of the Fabricmentioning

confidence: 99%

225 GHz triple‐push RTD oscillator with 0.5 mW dc‐power consumption

IET Circuits, Devices & Systems

Kim

Park

et al. 2020

Self Cite

This study reports on a sub-mW triple-push oscillator using resonant tunnelling diodes (RTDs) operating at a frequency of 225 GHz. The triple-push RTD oscillator is designed based on a stability test using even/odd-mode equivalent circuit models and fabricated by using an indium phosphide monolithic microwave integrated circuit process. The fabricated IC exhibits an extremely low dc-power consumption (P DC) of 0.5 mW with a dc-to-radio-frequency efficiency of 1%. These results are attributed to both device characteristics of the RTDs with a low bias voltage of 0.4 V and a low peak current density of 0.74 mA/μm 2 and an efficient triple-push topology exploiting the strong odd symmetry of the RTD I-V curve with a wide negative differential conductance voltage span of 0.46 V.

“…Due to nonlinear negative‐differential‐resistance (NDR) characteristics as well as high‐speed performances, quantum‐effect device technologies have been widely developed as an innovative technology to reduce dc power consumption . Among the quantum devices, an RTD has stable NDR characteristics at room temperature and hot temperature .…”

Section: Introductionmentioning

confidence: 99%

Temperature‐dependent characteristics of a RTD‐based microwave push‐push oscillator

Micro & Optical Tech Letters

Jeong

2018

Self Cite

In this letter, the temperature dependence of a microwave push-push oscillator based on a resonant tunneling diode (RTD) has been investigated from 308C to 808C. An output power characteristic curve of the second-harmonic RTD oscillator has been shifted to the higher bias voltages as temperature increases. An oscillation frequency shift of Df OSC has been obtained to be -9.8 MHz/K which is equivalent to the Df OSC of -4.9 MHz/K at the fundamental oscillation frequency of 14.45 GHz. To authors' knowledge, this is the first report on the temperature dependent characteristics of the second-harmonic push-push RTD oscillator. K E Y W O R D S oscillator, push-push, resonant tunneling diode, second-harmonic, voltage controlled oscillator Microw Opt Technol Lett. 2018;803-1066. wileyonlinelibrary.com/journal/mop V C 2018 Wiley Periodicals, Inc. | 803