2002
DOI: 10.1016/s0925-4005(02)00044-8
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A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating

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Cited by 113 publications
(70 citation statements)
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“…3 vs. H 2 pressure for an AlGaN/GaN diode held at V=-2V and T=100 o C. ∆I rapidly increased linearly with pressure in the low-pressure region and then showed saturation at pressures higher than 5 Torr. Liu et al [4] and Chen et al [5] reported similar characteristics for Pd/InP and Pd/GaAs Schottky diodes.…”
Section: H 2 Sensing Characteristicsmentioning
confidence: 73%
“…3 vs. H 2 pressure for an AlGaN/GaN diode held at V=-2V and T=100 o C. ∆I rapidly increased linearly with pressure in the low-pressure region and then showed saturation at pressures higher than 5 Torr. Liu et al [4] and Chen et al [5] reported similar characteristics for Pd/InP and Pd/GaAs Schottky diodes.…”
Section: H 2 Sensing Characteristicsmentioning
confidence: 73%
“…GaAs [26], InP [27,28], GaN [3,[29][30][31] and AlGaN/GaN [3,[32][33][34] materials, and liquid and biochemical sensors using GaAs [35,36], AlGaAs/GaAs [37], GaN [38] and AlGaN/GaN GaAs(001) [33,34] for possible application to so called DNA chips.…”
Section: Leakage Currents In Algan Schottky Diodesmentioning
confidence: 99%
“…The sensor working at high temperatures itself becomes a possible trigger of explosion, due to its enough input electrical energy of sensor operation [1]. The main advantages of Pd-contained sensors on the base of field-effect transistors, MOS structures, and structures with Schottky barrier are possibility to operate at room temperature, high selectivity to hydrogen and low-power consumption [2][3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%