A novel field plate with arcuate end for improving GaN HEMTs

Abstract

A new field plate (FP) is proposed for gallium nitride high‐electron‐mobility transistors (HEMTs). It features an innovative arcuate end (AE), which allows the induced charges that originally gathered at the FP end to diffuse over a wider area. Hence, not only is the electric field in the channel at the gate edge alleviated due to the induced charges, but also that concentrated at the FP end is reduced by means of AE. The simulation results indicate that by upgrading a source FP with AE, HEMT gains a 99% increase in breakdown voltage while remaining unaltered in specific on‐resistance. It also gets a 43.41% decrease in power loss during one cycle while maintaining the same breakdown voltage, which greatly contributes to enhance the efficiency of power electronic circuits.