A novel field-effect mobility measurement on a gateless InGaAs/InAlAs heterojunction in a parallel magnetic field

Abstract

A technique for measuring the field-effect mobility of a gateless In0.53Ga047As/In0.52Al0.48As heterojunction has been developed by using the nonpersistent photoconductive effect. Subband depopulation in a parallel magnetic field is consistent with the ‘‘universal’’ depopulation observed in InAs, InSb, and HgCdTe metal-oxide-semiconductor field-effect transistors.