A novel extraction method of device parameters for thin-film transistors (TFTs)

Bai, Ziheng; Lu, Nianduan; Wang, Jiawei; Geng, Ding; Liu, Dongyang; Xiao, Kui; Li, Ling

doi:10.1016/j.physleta.2021.127386

Cited by 6 publications

(1 citation statement)

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“…[15,[35][36] Similar phenomenon has also been observed in some amorphous semiconductors. [37][38][39] The V G -dependent mobility for a p-type TFT can be formulated as µ = µ 0 (V T − V G + V(x)) γ , where V T and V(x) are the threshold voltage and the local potential in the channel at distance x from the grounded source contact, respectively, γ is the field enhancement factor for mobility. Then a compact drain current (I D ) model [1,40] considering contact resistance effect is expressed as…”

Section: Transition-voltage Methods With Power-law Gate-voltage-depen...mentioning

confidence: 99%

A Universal Method for Extracting and Quantitatively Analyzing Bias‐Dependent Contact Resistance in Carbon‐Nanotube Thin‐Film Transistors

Liu

Wang

Zhang

et al. 2023

Adv Elect Materials

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A single‐device method is reported for extracting gate‐ and/or drain‐voltage‐dependent contact resistance of thin‐film transistors (TFTs). An extended transition‐voltage method is proposed and verified by experiments of all‐carbon‐nanotube thin‐film transistors (ACNT‐TFTs), which can extract gate‐ and/or drain‐voltage‐dependent contact resistance at source and drain independently. By measuring the output and transfer characteristics of a single‐device and extracting the basic parameters with the aid of mature Y‐function method, the contact resistance can be calculated directly. The results show that although a slight Schottky contact behavior is exhibited at very small drain voltages, good electrical contact characteristics can still be obtained in ACNT‐TFTs, exhibiting quasi‐Ohmic contacts. Compared with the existing single‐device methods, this method is suitable for both Ohmic and Schottky contact scenarios without requiring a complex iteration process, which greatly improves the universality and efficiency of the contact resistance extraction. Besides, this method reveals the physical essence of the complex interface contacts and enables researchers to quantitatively analyze the contact performance, not only for network carbon nanotube TFTs but also for the other emerging transistors.

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