2007 IEEE Symposium on VLSI Technology 2007
DOI: 10.1109/vlsit.2007.4339768
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A Novel DRAM Cell Transistor Featuring a Partially-insulated Bulk FinFET (Pi-FinFET) with a pad-Polysilicon Side Contacts (PSC)

Sangyong Han
1
,
J.M. Park
2
,
Si-Ok Sohn
3
et al.
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