A novel design of a microstrip microwave broadband power amplifier for DCS, PCS and UMTS bands

Rachakh, Amine; Abdellaoui, Larbi El; Zbitou, Jamal; Errkik, Ahmed; Tajmouati, Abdelali; Latrach, Mohamed

doi:10.1109/wits.2017.7934679

Cited by 5 publications

(2 citation statements)

References 10 publications

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“…DC-biasing circuits consist of Radial stub directly after a quarter-wavelength line (λ/4) add at the Drain and at the Gate, this Biasing circuit will help to achieve proper isolation at desired RF frequency and to play the role of an RF choke. The capacitors at input/output ports are utilized as DC blocking capacitors [18]. All capacitors value have been tuned to meet the available commercial at the market, along with different capacitors used in the proposed amplifier in Table 1.…”

Section: Design Proceduresmentioning

confidence: 99%

A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications

Rachakh¹,

Abdellaoui²,

Zbitou³

et al. 2018

IJECE

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Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the power amplifier and between the load and the output of the power amplifier. A "T" matching technique is used at the input and the output sides of transistor for assure in band desired that this circuit without reflections and to obtain a maximum power gain. The proposed power amplifier for microwave ISM applications is designed, simulated and optimized by employing Advanced Design System (ADS) software by Agilent. The PA shows good performances in terms of return loss, output power, power gain and stability; the circuit has an input return loss of -38dB and an output return loss of -33.5dB. The 1-dB compression point is 8.69dBm and power gain of the PA is 19.4dBm. The Rollet's Stability measure B1 and the stability factor K of the amplifier is greater than 0 and 1 respectively, which shows that the circuit is unconditionally stable. The total chip size of the PA is 73.5× 36 mm2.

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Section: Design Proceduresmentioning

confidence: 99%

A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications

Rachakh¹,

Abdellaoui²,

Zbitou³

et al. 2018

IJECE

Self Cite

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“…The characteristics of a wideband power amplifier are evaluated by its ability to achieve maximum power gain over the required frequency bandwidth, under stable operating conditions with a minimum of amplification stages and the need for high efficiency or linearity can be taken into account if necessary. We note that, for stable operation, it is necessary to evaluate the operating frequency domains in which the active device may be potentially unstable [4,5].…”

Section: Introductionmentioning

confidence: 99%

Approach for the Design of a Broadband Microwave Power Amplifier in Microstrip Technology for Mobile Communications Systems

LAHSAINI¹,

ZENKOUAR²,

SAADI³

2020

IJEEI

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This work presents a broadband power amplifier in S-band in microstrip technology. The proposed power amplifier is modeled with a single-stage architecture based on a field effect transistor ATF13786 of Agilent Technologies (hp) ® . The used transistor has been biased with transmission lines and it has been matched with networks in the form of λ/4 transformers filters at the input and at the output. This amplifier has been studied and optimized using the Advanced Design System (ADS ® ) software. The simulation results of the output power and S parameters show excellent characteristics with a satisfactory gain greater than 10.9 dB, low reflections, a saturated output power of 16.4 dBm with a 1 dB compression point at an input power level of about 5 dBm, a maximum PAE of 25.3% and unconditional stability in the desired frequency band. The modeled amplifier can be integrated into mobile communications systems namely LTE mobile networks (2500 to 2690 MHz) and wireless networks using Wi-Fi protocol (2400 to 2485 MHz).

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Design and Implementation of a 2W S-band Power Amplifier for Wireless Networks

Hoi,

Lanh,

Chuc

et al. 2024

2024 9th International Conference on Integrated Circuits, Design, and Verification (ICDV)

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A novel design of a microstrip microwave broadband power amplifier for DCS, PCS and UMTS bands

Cited by 5 publications

References 10 publications

A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications

A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications

Approach for the Design of a Broadband Microwave Power Amplifier in Microstrip Technology for Mobile Communications Systems

Design and Implementation of a 2W S-band Power Amplifier for Wireless Networks

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