2018
DOI: 10.1002/adma.201801935
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A Novel Conductive Mesoporous Layer with a Dynamic Two‐Step Deposition Strategy Boosts Efficiency of Perovskite Solar Cells to 20%

Abstract: Lead halide perovskite solar cells (PSCs) with the high power conversion efficiency (PCE) typically use mesoporous metal oxide nanoparticles as the scaffold and electron-transport layers. However, the traditional mesoporous layer suffers from low electron conductivity and severe carrier recombination. Here, antimony-doped tin oxide nanorod arrays are proposed as novel transparent conductive mesoporous layers in PSCs. Such a mesoporous layer improves the electron transport as well as light utilization. To resol… Show more

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Cited by 106 publications
(79 citation statements)
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“…The commonly used electron extraction layers in perovskite photodiodes are TiO 2 , [8,9] SnO 2 , [10,11] C 60 , [12,13] and phenyl-C61 butyric acid methyl ester (PCBM). [31] Finally, the Spiro-OMeTAD layer was coated on the perovskite film and 100 nm thick Ag electrode was deposited by thermal evaporation to obtain the final device. These parameters are comparable and even higher than previously reported self-powered perovskite and other types of photodetectors (Table S1, Supporting Information).…”
Section: Photodetectorsmentioning
confidence: 99%
“…The commonly used electron extraction layers in perovskite photodiodes are TiO 2 , [8,9] SnO 2 , [10,11] C 60 , [12,13] and phenyl-C61 butyric acid methyl ester (PCBM). [31] Finally, the Spiro-OMeTAD layer was coated on the perovskite film and 100 nm thick Ag electrode was deposited by thermal evaporation to obtain the final device. These parameters are comparable and even higher than previously reported self-powered perovskite and other types of photodetectors (Table S1, Supporting Information).…”
Section: Photodetectorsmentioning
confidence: 99%
“…Figure f shows the Nyquist plots of devices wo/w TPFPB passivation. The equivalent circuit model is shown in Figure S10, Supporting Information, and is composed of a series resistance ( R s ) and a transfer resistance ( R tr ) that correspond to the high‐frequency element in the Nyquist circle and a recombination resistance ( R rec ) that corresponds to the low‐frequency element in the Nyquist circle . The fitted parameters from the equivalent circuit are summarized in Table .…”
Section: Resultsmentioning
confidence: 99%
“…There are two semicircles located at different frequency ranges in the Nyquist plots. The high‐frequency component represents the charge transport resistance ( R ct ) and the low‐frequency one corresponds to the charge recombination resistance ( R rec ) occurring at the interfaces . The device prepared at 80 °C has an R ct of 208 Ω and an R rec of 4.24 kΩ, while the values for the 150 °C annealed device are 253 Ω and 1.33 kΩ, respectively, suggesting more efficient charge transport and less charge recombination.…”
Section: Resultsmentioning
confidence: 99%