A novel CdTe ink-assisted direct synthesis of CdTe thin films for the solution-processed CdTe solar cells

Concurrent investigation of antimony chalcogenide (Sb2Se3 and Sb2S3)-based solar cells with a potential WS2 electron transport layer

“…However, according to the review of simulation-based studies on these solar cells, the maximum efficiency is 23.18% [ 65 ]. Yet their theoretical PCE is inferior to that of comparable commercial TFSCs [ 24 , 68 ]. Furthermore, while CdS is widely used as a window or buffer layer in PV devices due to its appropriate bandgap [ 69 ], the toxicity of Cd [ 70 ] leads researchers to continue looking for other environmentally friendly and wide bandgap materials to use as window or buffer layer in antimony (Sb) chalcogenide-based solar cells [ 70 ].…”

Enhancement of Terahertz Radiation by Surface Plasmons Based on CdTe Thin Films

“…The Raman spectra of CdTe on Au and AuAg substrates were of the same shape, but the intensity collected from CdTe@Au was less than half of that from CdTe@AuAg. The characteristic Raman peak at 95 cm −1 indicated the low-intensity mode of CdTe [17] and the peak of 164 cm −1 corresponded to the LO mode from CdTe vibration [18][19][20]. The 141 cm −1 peak resulted in a combination of TO and E phonon modes of Cd, and the peak at 122 cm −1 was related to the A 1 mode of Te in CdTe.…”

Synthesis of Self-Assembled Randomly Oriented VO2 Nanowires on a Glass Substrate by a Spin Coating Method

“…Figure depicts the optical transmittance spectra of the nanowires-embedded VO 2 thin films on a glass substrate at different annealed temperatures. The figure demonstrates that the transmittance of the films was increased with an increasing annealing temperature which is likely due to the crystallization and oxidation of the thin films at higher annealing temperatures. − The film produced at 450 °C shows maximum transmittance of about 88.7% at a wavelength range of ∼975–1000 nm. It can be observed in the figure that there is a small bump in transmittance at a wavelength of ∼669 nm which may be extrinsically generated by the measuring device .…”