A Novel Carbon Nanotube Field Effect Transistor based Arithmetic Computing Circuit for Low-power Analog Signal Processing Application

Design of Analog Signal Processing Applications Using Carbon Nanotube Field Effect Transistor-Based Low-Power Folded Cascode Operational Amplifier

“…In CNFET-based implementation, number of tubes, pitch, and diameter are the parameters that are designed to achieve optimum result unlike aspect ratios in case of CMOS [2,3,[28][29][30]. In this analysis, unlike conventional op-amp, it is presumed that the current from Q1 directly flows through the drain of Q6 and thus to the load capacitance and the current from Q2 goes indirectly through Q5 and the current mirror consisting of Q7 to Q10.…”

“…In this work, MOSFET-like CNFETs are used for designing the FCOA circuit and due to the similarities between the MOSFET and MOSFET-like CNFET devices in terms of I-V characteristics and the other inherent attributes, design procedure of CNFET-based circuits is similar to CMOS [13,[30][31][32][33][34][35][36][37]. Furthermore, as in CNFET device μn � μp and all of the characteristics of the used CNFETs such as gate length (L � 32 nm), CNT diameters (DCNT � 1.49 nm), and pitch (8 nm), except the width of the CNFETs, are set to be identical, the only parameter here that could affect the gain of the FCOA is the width of CNFETs.…”

“…For simulation purposes, CNFET, SPICE compatible Stanford University 32 nm CNFET model is used [30]. In this study, top-gated undoped semiconducting MOSs like CNFETs with 4 nm thick HfO2, high-k dielectric (k � 16), chirality (19,0), and fixed diameter at 1.49 nm are used.…”

“…e similar kind of performance is not possible at such 4 Journal of Nanotechnology very deep submicron levels using CMOS due to extreme short-channel effects, lithographic limitations, process variations, leakage current, and source-to-drain tunneling [25,[37][38][39][40][41]. Further CNFET technology can also be easily clubbed with the bulk CMOS technology on a single chip and utilizes the same infrastructure [23,30,42]. An investigative result demonstrates that the frequency response of the designed OTA improves with the increase in diameter of the nanotube as shown in Figures 4(a) to 4(c).…”

A Review on MOSFET-Like CNTFETs

“…In general, for n stage ring oscillator, oscillating frequency can be calculated as given in equation 6 Figure 16 gives the circuit diagram of the 6-Transistror SRAM cell. CNTFET is one of the promising candidate for future nano electronics devices for low power low voltage digital or analog circuit application [9]. The average power consumed by 6-transitor SRAM using MOSFET-like CNTFET is measured using SPICE software for circuit simulation.…”