A novel capacitor-less DRAM with raised source structure

Lu, Dai-Rong; Lin, Jyi-Tsong; Tseng, Shih-Chuan; Lin, Po-Hsieh; Huang, Zih-Hao; Syu, Jyun-Min; Lin, Yen-Sheng

doi:10.1109/icsict.2014.7021486

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2017

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“…The charge trapping in the ATA structure is largely responsible for this effect. The kink effect has both its advantage and disadvantage over the memory devices: DRAM loses information from the memory cells due to off‐state leakages induced by the kink [5], while the ZRAM and TRAM use this phenomenon for charge storage [6]. This Letter presents the study of the occurrence of kink effect in TiO 2 embedded ZnO QDs‐based TFT at a voltage of ∼1.15 V. As per best of our knowledge, no such kind of results is reported for the ZnO QDs‐based TFT using TiO 2 as a floating gate.…”

Section: Introductionmentioning

confidence: 99%

Kink effect in TiO ₂ embedded ZnO quantum dot‐based thin film transistors

Kumar¹,

Kumar²,

Singh³

et al. 2017

Electron. lett.

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The kink effect at a very low voltage (∼1.15 V) region is reported in the electrical characteristics of a back-gated thin film transistor fabricated by embedding a TiO 2 (T) layer between two Al 2 O 3 (A) layers grown on a p-Si substrate using electron beam evaporation. A layer of ZnO quantum dots (QDs) deposited on the AT A structure by the sol-gel method is used for charge transportation between the source and drain electrodes grown on the ZnO QDs layer. The effect of TiO 2 is analysed for the charge trapping and possible occurrence of the kink effect.

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Section: Introductionmentioning

confidence: 99%