A Novel Biosensing Approach: Improving SnS₂ FET Sensitivity with a Tailored Supporter Molecule and Custom Substrate

Abstract

The exclusive features of two‐dimensional (2D) semiconductors, such as high surface‐to‐volume ratios, tunable electronic properties, and biocompatibility, provide promising opportunities for developing highly sensitive biosensors. However, developing practical biosensors that can promptly detect low concentrations of target analytes remains a challenging task. Here, a field‐effect‐transistor comprising n‐type transition metal dichalcogenide tin disulfide (SnS2) is developed over the hexagonal boron nitride (h‐BN) for the detection of streptavidin protein (Strep.) as a target analyte. A self‐designed receptor based on the pyrene‐lysine conjugated with biotin (PLCB) is utilized to maintain the sensitivity of the SnS2/h‐BN FET because of the π–π stacking. The detection capabilities of SnS2/h‐BN FET are investigated using both Raman spectroscopy and electrical characterizations. The real‐time electrical measurements exhibit that the SnS2/h‐BN FET is capable of detecting streptavidin at a remarkably low concentration of 0.5 pm, within 13.2 s. Additionally, the selectivity of the device is investigated by measuring its response against a Cow‐like serum egg white protein (BSA), having a comparative molecular weight to that of the streptavidin. These results indicate a high sensitivity and rapid response of SnS2/h‐BN biosensor against the selective proteins, which can have significant implications in several fields including point‐of‐care diagnostics, drug discovery, and environmental monitoring.

Designing of high performance MoS2@VZnS//AC hybrid battery supercapacitor device for the electrochemical energy storage and glucose detection

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Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering

“…In recent years, due to their unique structural and physical properties, the emergence of two-dimensional (2D) materials has provided an innovative platform for revolutionizing the photodetection industry toward higher sensitivity. − Among the 2D family, gallium selenide (GaSe) has demonstrated great potential for optoelectronic applications. GaSe is a layered III–VI binary semiconductor with a hexagonal lattice structure .…”

Realization of High Current Gain for Van der Waals MoS2/WSe2/MoS2 Bipolar Junction Transistor

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