A Novel Bandpass Waveguide Filter Structure on Siw Technology

Sotoodeh, Z.; Biglarbegian, B.; Kashani, Farrokh Hojjat; Mahabadi, Hossein Ameri

doi:10.2528/pierl08010204

Cited by 35 publications

(16 citation statements)

References 22 publications

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“…To achieve this, we must continue improving the waveguide fabrication process by carrying out computational analyses [1][2][3][4][5][6][7][8][9][10][11]. A PLC fabricated using a technique for fabrication of optical fiber can provide a high quality lightwave circuits on a substrate.…”

Section: Introductionmentioning

confidence: 99%

GROWTH AND CHARACTERIZATION OF SiO<sub>2</sub> FILMS DEPOSITED BY FLAME HYDROLYSIS DEPOSITION SYSTEM FOR PHOTONIC DEVICE APPLICATION

Bange¹,

Patil²,

Gautam³

2008

PIER M

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Abstract-There are various techniques for the deposition of SiO 2 films on silicon. Flame Hydrolysis Deposition (FHD) techniques is the most economical technique for the deposition of SiO 2 films. In this technique the SiO 2 films are deposited by hydrolysis of SiCl 4 in a high temperature H 2 -O 2 flame. In the present study we present the growth of SiO 2 films by indigenously developed FHD system and organic compound Tetraethoxyorthosiliate/Tetraethoxysilane TEOS as source of silicon. The films deposited by the FHD system are porous and need annealing at higher temperatures for the densification. We present here for the first time direct dense glassy transparent SiO 2 films deposited by our FHD system. The optical properties of the deposited films were studied by ellipsometery. FTIR spectroscopy was carried out to study the various characteristic peaks of SiO 2 bonds. The peaks corresponding to Si-O-Si stretching, bending and rocking modes are observed at 1090 cm −1 , 812 cm −1 and 463 cm −1 respectively. The absence of peaks corresponding to the OH bond in the deposited film reveals that the deposited films are most suitable for the photonic devices application. The surface analysis was carried out using SEM. The EDAX of the deposited film confirms the composition of the Si and O in the deposited film.

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Section: Introductionmentioning

confidence: 99%

GROWTH AND CHARACTERIZATION OF SiO<sub>2</sub> FILMS DEPOSITED BY FLAME HYDROLYSIS DEPOSITION SYSTEM FOR PHOTONIC DEVICE APPLICATION

Bange¹,

Patil²,

Gautam³

2008

PIER M

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“…Many approaches have been reported for the integration of waveguides and planar circuits [7,9,17,18,19]. In this work, a new and easy to build microstrip to SIW planar stepped transition is discussed.…”

Section: Microstrip Stepped Transitionmentioning

confidence: 99%

Substrate integrated waveguide (SIW) inductive window band-pass filter based on post-wall irises

Nouri

Haddadi²,

Benzaïm³

et al. 2011

Eur. Phys. J. Appl. Phys.

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Abstract. In this article, we demonstrate a new inductive-window 5.245-GHz-band-pass filter based on post-wall irises by standard PcB process on Epoxy FR4 substrate. A new and easy to build microstrip-to-waveguide transition that consists of three tapers is also designed to connect the filter to standard measurement system. Both simulated results and measurements have shown insertion-loss lower than 5 dB within 14% bandwidth around 5.245 GHz and input return loss better than 25 dB over the frequency range.PACS. 41.20.-q Applied classical electromagnetism -41.20.Jb Electromagnetic wave propagation; radiowave propagation.

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“…Planar forms of transmission line such as coplanar waveguide (CPW) have become one of the most widely used transmission lines in monolithic microwave integrated circuits (MMICs) due to the simplicity of fabrication and its ability to easily integrate series and shunt elements [1][2][3]11]. Rectangular waveguides still play an important role [9,10,[12][13][14], especially in very high frequency systems, where the loss in such a waveguide is significantly less than that in a popular planar transmission lines. For distributed element filters, † Also with School of Computer and Communication Engineering, Universiti Malaysia Perlis, Perlis, Malaysia CPW is seldom used in the millimeter-wave range due to its large insertion loss.…”

Section: Introductionmentioning

confidence: 99%

X-Band Trisection Substrate-Integrated Waveguide Quasi-Elliptic Filter

Ismail¹,

Razalli²,

Mahdi³

et al. 2008

PIER

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Abstract-A narrowband trisection substrate-integrated waveguide elliptic filter with coplanar waveguide (CPW) input and output ports is proposed and demonstrated for X-band applications. The filter is formed by incorporating metallized vias in a substrate (RT/Duroid) to create cross-coupled waveguide resonators. The result is an attenuation pole of finite frequency on the high side of the passband, therefore exhibiting asymmetric frequency response. The fabricated trisection filter with a centre frequency of 10.05 GHz exhibits an insertion loss of 3.16 dB for 3% bandwidth and a return loss of −20 dB. The rejection is larger than 15 dB at 10.37 GHz.

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A Novel Bandpass Waveguide Filter Structure on Siw Technology

Cited by 35 publications

References 22 publications

GROWTH AND CHARACTERIZATION OF SiO<sub>2</sub> FILMS DEPOSITED BY FLAME HYDROLYSIS DEPOSITION SYSTEM FOR PHOTONIC DEVICE APPLICATION

GROWTH AND CHARACTERIZATION OF SiO<sub>2</sub> FILMS DEPOSITED BY FLAME HYDROLYSIS DEPOSITION SYSTEM FOR PHOTONIC DEVICE APPLICATION

Substrate integrated waveguide (SIW) inductive window band-pass filter based on post-wall irises

X-Band Trisection Substrate-Integrated Waveguide Quasi-Elliptic Filter

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