A Novel Asymmetric Trench SiC MOSFET Embedded Unipolar Electron Channel with Improved Reverse Conduction Performance

Guo, Jingwei; Li, Ping; Ma, Rongyao; Hu, Shengdong

doi:10.1109/icsict55466.2022.9963293

Cited by 3 publications

(1 citation statement)

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“…SiC MOSFETs commonly make use of parasitic body-PN diodes as freewheeling diodes (FWD) in power inverter and converter systems [8]. However, parasitic body-PN diodes in SiC MOSFETs are not ideal for use as freewheeling diodes [9]. The reasons for this are as follows: Stacking faults (SFs) in SiC devices may cause reliability issues and increase conduction loss [10].…”

Section: Introductionmentioning

confidence: 99%

A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance

Yu,

Cheng,

et al. 2024

Micromachines

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In this paper, a novel asymmetric trench SiC MOSFET with a Poly-Si/SiC heterojunction diode (HJD-ATMOS) is designed to improve its reverse conduction characteristics and switching performance. This structure features an integrated heterojunction diode, which improves body diode characteristics without affecting device static characteristics. The heterojunction diode acts as a freewheeling diode during reverse conduction, reducing the cut-in voltage (Vcut-in) to a lower level than conventional asymmetric trench SiC MOSFET (C-ATMOS), while maintaining a similar breakdown voltage. Meanwhile, the split gate structure reduces gate-to-drain charge (Qgd). Through TCAD simulation, the HJD-ATMOS decreases Vcut-in by 53.04% compared to the C-ATMOS. Both Qgd and switching loss are reduced, with a decrease of 31.91% in Qgd and 40.29% in switching loss.

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Section: Introductionmentioning

confidence: 99%