A novel and low-cost method to detect delay variation by dynamic thermal laser stimulation

Wu, Chunxia; Motohiko, Masuda; Wang, Winter; Song, Grace; Li, Jinglong; Yu, Joe; Tian, Li; Wu, Miao

doi:10.1109/irps.2011.5784574

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Cited by 5 publications

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“…This technique can directly pinpoint defect locations prior to destructive physical analysis sometimes. It employs a laser to scan across a die or area of a die whose wavelength is 1340nm for avoiding creating electron-hole pairs [3]. The localized laser heating causes resistance changes in some defect types.…”

Section: Introductionmentioning

confidence: 99%

Lock-in IR-OBIRCH assisted with current detection probe head extend its application to high voltage high current failure analysis

Wu¹,

Liu²,

Wu³

et al. 2012

2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

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Lock-in IR-OBIRCH analysis is very effective for defect localization in failure analysis. However, there are some cases that only have failures under high voltage and high current condition, which limits the application of Lock-in IR-OBIRCH as it only supply maximal 25V voltage and 100mA current. Current Detection Probe Head extend its capability that can supply maximal 250V voltage and 6.3A current, which supply a good solution about defect localization for high voltage and high current failure mode.

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Section: Introductionmentioning

confidence: 99%