A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process

Lee, Chwan-Ying; Yen, Cheng-Tyng; Chu, K.R.; Chen, Young-Shying; Hung, Chien‐Ching; Lee, Lurng-Shehng; Yang, Tzong Jer; Chuang, Chun‐Yu; Huang, Cheng-Chin; Tsai, Ming-Jinn

doi:10.1109/ispsd.2013.6694473

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…As the W fp increases, the EF crowding near the main can be effectively suppressed by the FP as shown in inset (b). The oxide field is 2.77 MV/cm, shown in inset (b), which is less than the oxide critical field (6 MV/cm in [31]). This means that there is no oxide degradation at breakdown.…”

Section: Resultsmentioning

confidence: 83%

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

et al. 2018

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In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 1012 cm−2 to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 1012 cm−2 to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.

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Section: Resultsmentioning

confidence: 83%

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

et al. 2018

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“…Silicon carbide (SiC) power MOSFETs are believed to be the ideal choice for future power electronics due to many superior properties of the SiC material [1][2][3][4] . Besides the high blocking voltage, small on-state resistance and fast switching speed, another property that researchers are particularly interested in is the high temperature capability of SiC MOSFETs, which is becoming more important as power electronics faces wider applications in harsh environments.…”

Section: Introductionmentioning

confidence: 99%

Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

Liu

Jiang

Sung

et al. 2017

MSF

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“…Due to the small diffusion rate of impurity carriers in the SiC material, high-energy ion implantation is the only way to achieve high-quality, highly doped SiC [29,30]. Additionally, in the device fabrication process, aluminum (Al) ion implantation [31][32][33] is used to form p-SiC. Although Al ion implantation can cause significant lattice damage, this can be mitigated by closely controlling the annealing and implantation conditions [34].…”

mentioning

confidence: 99%

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

Wang

Mao

et al. 2020

IEEE J. Electron Devices Soc.

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In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff). The electrical properties of the proposed and contrast structures are all simulated using the ATLAS simulation software to research the working mechanism of this improved structure. For the static performance, the specific ON-resistance (Ron,sp) and the figure of merit (FOM = VBR 2 / Ron,sp) are not influenced much as compared to the traditional structure at the same breakdown voltage (VBR) of 12 kV. However, with a prominent electron current path formed by the heterojunction region of CTH-IGBT, a very available conduction path to discharge the electrons during turn-off process is proved in this paper. The simulation results demonstrate that compared with the traditional structure, the turn-off energy loss of the CTH-IGBT is reduced by 76.4%, while the turn-off time is reduced by 85.0%. Index Terms-4H-SiC, heterojunction, Insulated Gate Bipolar Transistor (IGBT), turn-off loss, turn-off time, breakdown voltage. I. INTRODUCTION he performance of silicon-based devices is gradually approaching its limits, and it has become increasingly difficult to meet the application requirements of modern power electronic systems. The third-generation semiconductor material silicon carbide (SiC) has gradually replaced the use of silicon (Si) in power applications due to its wide band gap, high breakdown electric field, high thermal conductivity, high electron saturation drift speed and higher radiation resistance. It is widely used to make high-power devices for application in high temperature, high voltage, high frequency and radiation resistant operating environments and requirements [1-6].

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A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process

Cited by 5 publications

References 2 publications

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

Low Turn-Off Loss 4H-SiC Insulated Gate Bipolar Transistor With a Trench Heterojunction Collector

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