A novel 4H-SiC MESFET with ultrahigh upper gate

Jia, Haiqiang; Zhang, Hang; Ding, Xing; Luo, Yehui; Duan, Baoxing

doi:10.1016/j.spmi.2015.07.050

Cited by 9 publications

(3 citation statements)

References 16 publications

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“…The existence of ultrahigh upper gate makes the surface electric field distribution be modulated [10]. With the employment of serpentine channel simultaneously, it could be more prominent on the breakdown of the device.…”

Section: Breakdown Voltagementioning

confidence: 99%

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Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

Jia¹,

Luo²,

Ma³

2017

dtcse

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Abstract. An improved ultrahigh upper gate 4H-SiC MESFET (UU-MESFET) with serpentine channel structure (UUSC-MESFET) was proposed. With the implement of the serpentine channel, the channel electric field and the gate depletion layer have been more modulated compared with the UU-MESFET. The simulations show that the breakdown voltage and the drain saturation current of UUSC-MESFET are improved by 13.6%, 12% than those of UU-MESFET and by 44.5%, 23% than those of the double-recessed structure (DR-MESFET). By introducing a recessed channel layer, the proposed structure has an improvement of 27.3%, 81.3% in the out maximum power density compared with that of the UU-MESFET and DR-MESFET, respectively. In the meanwhile, the proposed structure possesses smaller gate-source capacitance, which results in better RF characteristics. Therefore the proposed structure has a superior electrical characteristic and performance.

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Section: Breakdown Voltagementioning

confidence: 99%

“…However, the structures mentioned above achieve smaller capacitance but do not implement a larger current or a larger breakdown voltage. To get greater electrical properties, ultrahigh upper gate [10] was proposed. But the drain saturation current of UU-MESFET is slightly increased when the H ug achieves to a certain degree.…”

Section: Introductionmentioning

confidence: 99%

Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

Jia¹,

Luo²,

Ma³

2017

dtcse

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“…In this paper, an improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) structure with high PAE is proposed based on an ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) [ 9 ]. The proposed IUU-MESFET structure achieves high PAE by modifying the ultrahigh upper gate height h of the UU-MESFET.…”

Section: Introductionmentioning

confidence: 99%

An Improved UU-MESFET with High Power Added Efficiency

Jia

Zhu

2018

Micromachines

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An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (UU-MESFET) structure, and the h is 0.1 μm and 0.2 μm for the IUU-MESFET and UU-MESFET, respectively. Compared with the UU-MESFET, the IUU-MESFET structure has a greater threshold voltage and trans-conductance, and smaller breakdown voltage and saturation drain current, and when the ultrahigh upper gate height h is 0.1 μm, the relationship between these parameters is balanced, so as to solve the contradictory relationship that these parameters cannot be improved simultaneously. Therefore, the power added efficiency (PAE) of the IUU-MESFET structure is increased from 60.16% to 70.99% compared with the UU-MESFET, and advanced by 18%.

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A novel recessed gate MESFET by embedded dielectric packet

Roustaie

Orouji

2017

J Comput Electron

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A novel 4H-SiC MESFET with ultrahigh upper gate

Cited by 9 publications

References 16 publications

Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

Improved Ultrahigh Upper Gate 4H-SiC MESFET with Serpentine Channel Structure

An Improved UU-MESFET with High Power Added Efficiency

A novel recessed gate MESFET by embedded dielectric packet

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