2015
DOI: 10.1080/00207217.2015.1036813
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A novel ±0.8 V high-performance voltage-tunable CDTA with enhanced bandwidth

Abstract: A c c e p t e d M a n u s c r i p t 1 A novel ±0.8V high performance voltage-tunable CDTA with enhanced bandwidthIn this paper, we proposed a novel high performance CMOS CDTA with the G M can be linearly tuned by a voltage. By using high-speed low voltage cascaded current mirror active resistance compensation technique, the proposed CDTA circuit exhibits wide frequency bandwidths, high current tracking precisions as well as large output impedances. The linear-tunable G M of CDTA is designed with use of linear … Show more

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Cited by 11 publications
(5 citation statements)
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“…By applying positive V BG , the I OFF is further suppressed to be ≈0.11 pA due to the reduction of the kinetic energy of electrons, the I ON increases up to 4.58 µA attributing to an increase in the electron density in bottom MoS 2 layer. As shown in Figure 3d, the maximum transconductance ( G max ) is also increased with bottom gate at V DS of 2 V, reaching up to 15.14 µS, which is twice as high as that at V BG = 0 V. In previous reports, the transconductance was usually raised by increasing the bias voltage, but at the expense of power consumption, [ 62–64 ] our transistor then provides a power‐efficient way to tune the G max using an additional gate knob. As the bottom gate increases, the V T gradually shifts from negative to positive (from −0.17 to 0.58 V), indicating the bottom gate has great regulation on the electrical transport barrier in the top‐gated transistor.…”
Section: Resultsmentioning
confidence: 60%
“…By applying positive V BG , the I OFF is further suppressed to be ≈0.11 pA due to the reduction of the kinetic energy of electrons, the I ON increases up to 4.58 µA attributing to an increase in the electron density in bottom MoS 2 layer. As shown in Figure 3d, the maximum transconductance ( G max ) is also increased with bottom gate at V DS of 2 V, reaching up to 15.14 µS, which is twice as high as that at V BG = 0 V. In previous reports, the transconductance was usually raised by increasing the bias voltage, but at the expense of power consumption, [ 62–64 ] our transistor then provides a power‐efficient way to tune the G max using an additional gate knob. As the bottom gate increases, the V T gradually shifts from negative to positive (from −0.17 to 0.58 V), indicating the bottom gate has great regulation on the electrical transport barrier in the top‐gated transistor.…”
Section: Resultsmentioning
confidence: 60%
“…In most of the CDTAs available in literature, transconductance (g m ) has been varied by changing the biasing current of CDTA which leads to higher power dissipation and limited range of transconductance. The paper reported in [13] offers a wide bandwidth of transconductance but the value of transconductance (g m ) is limited up to 1.175 mA/V. Thus, the paper aims to design a CDTA with high transconductance and provides a wide tuning range while the power dissipation and bandwidth remains almost in the same range as in CDTAs available in literature.…”
Section: Introductionmentioning
confidence: 93%
“…A transconductance boosted CMOS CDTA (TBCDTA) has been reported in [12] which offers a high and wide range of transconductance as compared to previously reported CDTAs. Recently, a voltage tunable CDTA with high performance and enhanced bandwidth has been proposed in [13]. Apart from the advancement in the structure of CDTA, there are a lot of papers published in the applications such as current limiter [14], filters [15][16][17][18][19], inductance simulation circuits [20], multipliers [21,22], modulators [23], oscillators [24][25][26][27][28][29][30][31], rectifier [32,33] etc.…”
Section: Introductionmentioning
confidence: 99%
“…It has continuously drawn attention to the researchers due to its advantages of larger dynamic range, lower power consumption and wider bandwidth. There are few papers published on different structures of CDTA [2][3][4][5][6][7][8][9][10] in which its advantages and disadvantages have been shown and compared with other state of the art solutions. Apart from work on the structures of CDTA, there are numerous papers published on the applications such as current limiter [11], filters [12][13][14][15][16][17][18][19], modulators [20], multiplier [21], oscillators [22][23][24][25][26][27][28][29][30][31][32][33][34][35], rectifiers [36][37][38], Schmitt trigger [39], and squarer and square rooter circuit [40].…”
Section: Introductionmentioning
confidence: 99%