A noticeable improvement in opto-electronic properties of nebulizer sprayed In2S3 thin films for stable-photodetector applications

Lavanya, S.; Kumar, T Rajesh Senthil; Gunavathy, K. V.; Vibha, K.; Shkir, Mohd.; Hakami, Jabir; Ali, H. Elhosiny; Ubaidullah, Mohd

doi:10.1016/j.micrna.2022.207337

Cited by 14 publications

(7 citation statements)

References 45 publications

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“…This suggests the higher ability of the device to convert incoming photon to current compared to other samples. The device's estimated detectivity was higher compared to the other reported works [44,45].…”

Section: Photo-sensing Characteristicscontrasting

confidence: 56%

“…Among III-VI semiconductors, In 2 S 3 is a n-type with a bandgap of 2.0-2.3 eV which is very exciting in ambient conditions due to its high photocatalysis, photoconductivity, and photosensitivity properties [6]. Depending on the temperature and pressure, indium sulphide can exist as one of three crystalline phases at atmospheric pressure: α (defect cubic), β (defect spinel) or γ (layered structure) [7,8]. Among these, due to its intrinsic defect structure, larger bandgap and a large Bohr-exciton diameter β-In 2 S 3 has shown interesting opto-electronic, luminescence, acoustic and sensitization properties through the exploration of quantum confinement effects by modifying shapes and sizes [9].…”

Section: Introductionmentioning

confidence: 99%

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Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Alkallas,

Ben Gouider Trabelsi,

Shkir

et al. 2023

Phys. Scr.

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In the present work, undoped In2S3 and varying concentrations of Tb (1, 2, 3, 4 & 5 wt%) doped In2S3 thin films were synthesized using the economical and nebulizer spray pyrolysis technique for studying their photosensing characteristics at room temperature. X-ray diffractometer (XRD) studies showed the diffraction pattern of the thin films exhibits a cubic- β phase of In2S3 and the highest crystallite size of 61 nm was observed for the In2S3: Tb (2wt%) thin film. The morphological & elemental analysis showed that all the synthesized thin films exhibit homogeneous non-uniform crystal morphology with the existence of S, In, Tb compounds with their distinct composition. From Ultraviolet-Visible(UV–vis) studies, all the prepared thin films exhibit maximum absorption in the UV region with a minimum bandgap of 2.85 eV for the In2S3:Tb (2wt%) thin film. Also, the Photoluminescence (PL) spectra showed that the In2S3:Tb (2wt%) thin film possesses two large intense emission peaks around ∼470 nm (Yellow) and 530 nm (green). Finally, the photo sensing studies showed that the fabricated In2S3:Tb (2wt%) thin film photodetector showed better photocurrent, Responsivity (R), Detectivity (D*), External Quantum Efficiency (EQE), Response/Recovery time values of ∼12.5 μA, 0.296 AW−1, 7.75 × 1010 Jones, 60%, 2.9/3.6 s, respectively indicating the device better suitable for commercial photodetector application.

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Section: Photo-sensing Characteristicscontrasting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Alkallas,

Ben Gouider Trabelsi,

Shkir

et al. 2023

Phys. Scr.

Self Cite

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“…These increases in photoresponsivity, external quantum efficiency, and detectivity by incorporating vanadium enhanced the conductivity and the electron transportation that can be confirmed by the electrical attributes. 46 The incorporation of vanadium leads to an increase in photoresponsivity, external quantum efficiency, and detectivity, which may be decided by two reasons. The first reason is that vanadium-incorporated CGST fashioned a substantial increase in the lower wavelength, which may be due to the formation of an intermediate band, as previously reported in the literature.…”

Section: Resultsmentioning

confidence: 99%

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Vijayan,

Thirumalaisamy,

Vijayachamundeeswari

et al. 2023

New J. Chem.

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“…Compared to other thin films, the Bi 2 S 3 :Sn 2% thin film exhibits a high-intensity absorbance peak due to its large crystallite size. The larger crystallite/grain size causes more scattering of light leading to the increase in absorption of the sample [39]. This increased absorption would induce production of more charge carriers to increase the current value which would be beneficial for the application of photo sensors.…”

Section: Morphology Characteristicsmentioning

confidence: 99%

Photodetecting properties on Sn-doped Bi₂S₃ thin film fabricated by nebulizer spray pyrolysis technique

Ganesh¹,

AlAbdulaal²,

Yahia³

2023

Phys. Scr.

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Metal chalcogenides have recently gained intensive attention due to their tunable bandgap energy, optoelectronic characteristics, and exceptional optical absorption. Because of the potential advantage of photodetectors, photovoltaic, holographic recording systems, and field-effect transistors, bismuth tri-sulfide (Bi2S3) crystals, in particular, have attracted a lot of focus in scientific research. In this study, the low-cost nebulizer spray technique was employed to synthesize the proposed Bi2S3:Sn thin films on glass substrates, varying the Sn doping concentrations in Bi2S3 films (from 1 to 3%). The crystallites of the orthorhombic-structured polycrystalline Bi2S3 films were all oriented in the same direction (130). According to the XRD spectra, preferred orientation and crystalline quality were improved by Sn doping concentrations up to 2%, but, above 2% of the Sn doping ratio, the structural properties were decreased. With increasing Sn-doping levels, the estimated direct band gap (Eg) of the Bi2S3:Sn films decreased, reaching a low value of 2.01 eV at 2% Sn and then rising. A field emission scanning electron microscope (FESEM) was applied to determine the size and shape of the grains in prepared Sn: Bi2S3 films.The 2% Sn-doped Bi2S3 thin film may be more appropriate for high-speed optoelectronic devices due to its high responsivity (1.24 AW-1), external quantum efficiency (40%), and detectivity properties (1.83×1010Jones). A potential mechanism for photodetector performance in the presence of air and UV radiation was also discussed in the present work for the proposed Sn: Bi2S3 thin films.

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A noticeable improvement in opto-electronic properties of nebulizer sprayed In2S3 thin films for stable-photodetector applications

Cited by 14 publications

References 45 publications

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Photodetecting properties on Sn-doped Bi₂S₃ thin film fabricated by nebulizer spray pyrolysis technique

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A noticeable improvement in opto-electronic properties of nebulizer sprayed In2S3 thin films for stable-photodetector applications

Cited by 14 publications

References 45 publications

Improved photo sensing behavior of the terbium doped In2S3 thin films synthesized by spray pyrolysis technique

Improved photo sensing behavior of the terbium doped In2S3 thin films synthesized by spray pyrolysis technique

Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Photodetecting properties on Sn-doped Bi2S3 thin film fabricated by nebulizer spray pyrolysis technique

Contact Info

Product

Resources

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Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Improved photo sensing behavior of the terbium doped In₂S₃ thin films synthesized by spray pyrolysis technique

Photodetecting properties on Sn-doped Bi₂S₃ thin film fabricated by nebulizer spray pyrolysis technique