A note ‘on the measurement of intrinsic boundary dislocation spacing from electron micrographs’

Shah, D. M.; Krishnamachari, V.; Notis, Michael R.

doi:10.1016/0036-9748(77)90240-x

Cited by 5 publications

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“…the past year have centered on the examination of dislocation structures in both pure and Li doped CoO by TEM, and the effect of both impurity doping and stress level on dislocation spacing. An accurate means of measuring dislocation spacing from TEM thin foils has been developed[14] and this technique has been used to develop quantitative relationships as a function of impurities for Li doped CoO[15]. It has been shown that Li impurity additions increase the dislocation spacing, and reduce the steady state stress exponent, n,from 4.4 to 3.1; independent results obtained both by stress increment tests and by direct TEM examination are in excellent agreement.…”

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Pressure sintering and creep deformation: a joint modeling approach. Progress report, January 1, 1977--December 31, 1977

Notis¹

1977

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Ibure portw is prepie d a. an accou nt of work I K i spon.re d •by the United States Govern ment. Neither | 1 I the Unifed States nor the United States Ene,gy | % Resear ch and Develop ment Adminis tration, nor any of | I their emplo yees, nor any of Iheir .contra ctors. subconin cton, 01 thei, employe es, ' thakes any , Mmity , expreg or imptie d, or mirna any legal I or ustfulne ss of any infornit ion, appa/tw , produc t or I Micha el R.•No tis | process disclosed, or represents thal its use would not 11 ' tablbly Or tespon sibitity for the accura cy, comple tenes I 1 | infringe privately owned rights _ 11

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confidence: 99%