A Non-Traditional Vapor-Liquid-Solid Method for Bulk Synthesis of Semiconductor Nanowires

Sharma, Shashank; Sunkara, Mahendra K.; Lian, Guoda; Dickey, Elizabeth C.

doi:10.1557/proc-703-v3.10

Cited by 4 publications

(4 citation statements)

References 29 publications

(18 reference statements)

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“…In the case of silicon dissolution from the solidliquid interface, the temperature is the single most important parameter for determining the rate at which the dissolution occurs. Due to large differences in melting point of solid silicon and the Ga-Si eutectic temperature (∼30 • C), the dissolution is quite rapid even at modest temperatures of few hundred • C. Later, we showed that chemical vapour transport of silicon using atomic hydrogen onto molten gallium placed on non-silicon substrates confirmed that silicon could be dissolved directly from the gas phase into molten gallium for silicon nanowire synthesis [7]. Here, we report our experiments using silane directly in the gas phase for bulk synthesis of silicon nanowires from molten gallium covered non-silicon substrates.…”

Section: Introductionmentioning

confidence: 75%

Direct synthesis of single-crystalline silicon nanowires using molten gallium and silane plasma

Sharma¹,

Sunkara²

2003

Nanotechnology

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We report the first ever demonstration of using silane directly in the gas phase and molten gallium in a microwave plasma for bulk nucleation and growth of single-crystal quality silicon nanowires. Multiple nanowires nucleated and grew from micron- to millimetre-sized gallium droplets. The resulting nanowires were tens to hundreds of nanometres in diameter and were tens to hundreds of microns long. Transmission electron microscopy results confirmed the nanowires to be single crystalline, devoid of structural defects, and grown along the direction. The as-synthesized silicon nanowires were sheathed with an ultrathin (<1 nm) non-uniform native oxide amorphous layer that could be directly used in the assembly of electronic and optoelectronic devices.

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Section: Introductionmentioning

confidence: 75%

Direct synthesis of single-crystalline silicon nanowires using molten gallium and silane plasma

Sharma¹,

Sunkara²

2003

Nanotechnology

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“…The ethanolic suspension was then dripped on a carbon coated copper TEM grid. The chemical composition was investigated by secondary ion mass spectroscopy (SIMS) [CAMECA] using Ar 1 ions analyzing the isotopes C 12 , N 14 , O 16 , Al 27 and Ga 69 . Rutherford backscattering spectroscopy (RBS) measurements were taken using the instruments at the DTL (Dynamic Tandem Laboratory).…”

Section: Methodsmentioning

confidence: 99%

“…The diameters of the reported GaN nanostructures varied widely with the synthesis method but were within the range of 50 nm. 2,3,14,16,17,46 Nanostructures with bigger diameters have also been reported, 24,25,45 however, nanostructures with very small diameters of a few nm have not been routinely achieved. In all cases lengths were of the order of several microns.…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

MOCVD of gallium nitride nanostructures using (N3)2Ga{(CH2)3NR2}, R = Me, Et, as a single molecule precursor: morphology control and materials characterization

Wohlfart¹,

Parala²,

Devi³

et al. 2003

J. Mater. Chem.

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“…Our work has proved that one can successfully obtain high densities of nanometer scale nuclei from pools of quasi-miscible solvents for solutes. [12][13] The critical nucleus diameter, d c , associated with the creation of a nucleus from a molten solvent according to classical nucleation theory is given by (Eq. 1), 14…”

Section: Multiple Nucleation and Growth Of Nanowires Using Low-meltinmentioning

confidence: 99%

Chemical design of inorganic nanowires, nanotubes and nanowire networks

Sunkara

Vaddiraju

Bhimarasetti

et al. 2004

Nanosensing: Materials and Devices

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Inorganic nanowires are expected to play a central role in the re-engineering of products with applications in composites, thin films, nanodispersions, energy conversion devices, sensors, nanoelectronic devices and optics. The synthesis of materials at the nanoscale might also help in the discovery of new phases with interesting properties. However, the synthesis strategies for inorganic nanowires is quite limited and have not reached the level of maturity needed for either bulk manufacturing or for controlling nanowire characteristics such as sub 10 nm diameters and different growth directions. In this regard, we report several synthesis strategies that potentially offer in-situ control over the resulting nanowire characteristics such as size, growth direction and an ability to form two-dimensional networks. The techniques described here could be scaled up easily for bulk production of various nanostructures. Our preliminary results suggest that the nanowires form stable dispersions in both organic and aqueous solvents compared to nanoparticles of the same material. INTRODUCTIONIn the last few years, the synthesis of inorganic nanowires and nanotubes has gained tremendous importance for several reasons 1 (a) the availability of nanowires allows for rapid experimental understanding of the physics and chemistry of materials under reduced dimensions; 2 (b) the synthesis of materials at the nanometer scale could lead to the discovery of new phases through their structural variations, for example -nanotubes; 3 (c) the availability of nanowires and nanotubes in large quantities could allow for bottom-up assembly techniques for several engineering application areas such as composites, electronics, catalysts and optics; 4 and (d) the possibility of growing perfect crystals at the nanoscale. However, the nanowire quantities required for particular applications vary. These requirements range from bulk quantities for composites and thin films to single wires for sensors and electronic devices to large area arrays for field emission based applications. The growth of one-dimensional crystals in the form of micron-scale whiskers has been known for several decades starting in 1940s 5 and was formalized as the Vapor-Liquid-Solid method in 1964. 6 More recently in 1991, a similar strategy was employed to discover the growth of carbon nano-tubular structures. 7The vapor-liquid-solid (VLS) method employs catalyst clusters to template one-dimensional growth. In the VLS technique, a vapor phase solute is selectively dissolved into metal droplets, and it precipitates one-dimensionally due to the metal droplet size confinement. Recognizing the fact that one can reduce the resulting wire size by reducing the metal droplet size, several researchers sought different ways of creating smaller clusters and providing solutes using different means. The notable techniques involved laser ablation of solid targets containing metal catalysts, 8 thermal chemical vapor deposition 9 over catalyst cluster dispersions on supports and gold clusters dis...

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A Non-Traditional Vapor-Liquid-Solid Method for Bulk Synthesis of Semiconductor Nanowires

Cited by 4 publications

References 29 publications

Direct synthesis of single-crystalline silicon nanowires using molten gallium and silane plasma

Direct synthesis of single-crystalline silicon nanowires using molten gallium and silane plasma

MOCVD of gallium nitride nanostructures using (N3)2Ga{(CH2)3NR2}, R = Me, Et, as a single molecule precursor: morphology control and materials characterization

Chemical design of inorganic nanowires, nanotubes and nanowire networks

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