A non-contact interconnection through an electrically thick ground plate common to two microstrip lines

Davidovitz, M.; Sainati, Robert; Fraasch, Steven

doi:10.1109/22.375221

Cited by 20 publications

(5 citation statements)

References 5 publications

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“…Since both upper and lower shielding would generally be required for each line in a 3D membrane-based MCM, this local variation in ground plane separation would be difficult to achieve using traditional fabrication techniques such as silicon micromachining. This means that their demonstration to date has only involved the coupling of unshielded coplanar lines with a common substrate [27,30], or microstrip lines with a common substrate [30] or ground plane [25,26,28,29,31] (Figure 1(b)), and this has until now The proposed 3D millimeter-wave MCM is similar in concept to that illustrated in Figure 1 but is fully compatible with the micromachined lines demonstrated in [1] and the vias characterized in Sections 3.1 and 3.2. The characterized vertical coupling structures allow the routing of millimeter-wave signals between the adjacent levels of a 3D module created by stacking self-aligning micromachined shielding and membrane layers.…”

Section: Vertical Interconnectsmentioning

confidence: 81%

“…The high-performance vias which have been extensively demonstrated so far fall into two categories: electromagnetically coupled [25][26][27][28][29][30][31] with at best, 0.2 dB insertion loss at W-band [30] for a microstrip type geometry, and direct contact transitions [31][32][33][34][35] with around 0.6 dB insertion loss at 94 GHz [31] for a coplanar line. Both of these have been demonstrated only between lines fabricated on bulk dielectrics.…”

Section: Vertical Interconnectsmentioning

confidence: 99%

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Design of a Non-Contact Vertical Transition for a 3d Mm-Wave Multi-Chip Module Based on Shielded Membrane Supported Interconnects

Farrington¹,

Iezekiel²

2011

PIER B

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Abstract-The preliminary design concept, for a low-loss, highbandwidth electromagnetically coupled vertical transition for use as a via between adjacent levels of a 3D-MCM based on membranesupported striplines with micro-machined shielding, is presented. The design methodology, modeling using Ansoft HFSS and simulated results are presented and together represent a complete electrical characterization of the vertical transition. The simulated insertion loss of these structures is shown to be as low as 0.12 dB at 60 GHz with a 44 GHz 1 dB bandwidth. Besides studying the vertical transition, the analysis is extended to identify the range of directional coupling which can be achieved using this type of structure, which is shown to be greater than 3 dB. The structures studied rely on a versatile micromachining technique for the fabrication of the micro-shielding which allows for the conformal packaging of lines and devices, with the ultimate aim of realizing 3D system-in-a-package type modules. The concept and proposed fabrication techniques for these modules, including methods of flip-chip MMIC attachment are detailed.

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Section: Vertical Interconnectsmentioning

confidence: 81%

Section: Vertical Interconnectsmentioning

confidence: 99%

Design of a Non-Contact Vertical Transition for a 3d Mm-Wave Multi-Chip Module Based on Shielded Membrane Supported Interconnects

Farrington¹,

Iezekiel²

2011

PIER B

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“…The model of the latter interaction, including the equivalent circuit representation, was presented in ref. 3. After the equivalent circuit for the NRDW-slot junction is obtained, it is combined with the equivalent circuit for the aperture-loaded microstrip to yield the final circuit model for the NRDW-to-microstrip coupler.…”

Section: Circuit Model and A Computed Examplementioning

confidence: 99%

A model for slot-coupled nonradiative dielectric waveguide and microstrip line

Davidovitz

1997

Int. J. Microw. Mill.-Wave Comput.-Aided Eng.

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“…If the wall thickness exceeds this value, a waveguide concept [ 10] has to be introduced. If the wall thickness exceeds this value, a waveguide concept [ 10] has to be introduced.…”

Section: Connection For Dual Polarisation With Finite Thick Wallsmentioning

confidence: 99%

RF Interconnects Based on Electromagnetic Coupling for the Transition between Components in Highly Integrated SAR-Systems

Loffler¹,

Wiesbeck²

1999

Frequenz

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In this paper a new lightweight RF interconnect using electromagnetic coupling through an aperture is presented. To show the improvement in comparison to a coaxial interconnect in both electrical and mechanical performance, two demonstrators, one with the new connector and one for reference, have been built at 9.6 GHz. Both demonstrators consist each of two parts, a T/R-module and the antenna, respectively. The reference setup Is connected in a traditional way by SMA-type connectors, the second demonstrator uses the new aperture coupled interconnection. From the measured data it is clear that the electrical performance of this new transition in terms of attenuation is nearly 1 dB better than a conventional transition. The aperture coupled transition is more reliable, smaller and has lower cost. ÜbersichtIn diesem Beitrag wird ein neuartiger HF-Übergang vorgestellt, der es erlaubt, mit Hilfe von Aperturkopplung genauste Komponenten eines Systems zu verbinden. Zur Demonstration der Leistungsfähigkeit des neuen Übergangs wurden bei 9,6 GHz zwei Muster aufgebaut, die jeweils aus einem l /n Modul und einer Antenne bestehen. Die Verbindung ist beim Referenzmuster mit herkömmlichen SMA-Steckem gelöst, beim Testobjekt wird die aperturgekoppelte Verbindung eingesetzt. Wie die gemessene Durchgangsdämpfung beider Muster zeigt, besitzt der aperturgekoppelte Übergang 1 dB weniger Durchgangsdämpfung als die SMA-Verbindung. Zusätzlich ist die aperturgekoppelte Verbindung kleiner, kostengünstiger und leichter zu integrieren.Für die Dokumentation HF-Verbinder / Aperturkopplung / Elektromagnetische Kopplung / Integration / Subsysteme / T/R-Modute / Antennen / Gruppenantennen / Netzwerke / SAR-Systeme Horizontal polarization outVertical polarization out Test out Radiating elementsRg. 2: X-Band T/R-Modute (by courtesy of DaimlerChrysler Aerospace Ulm) and dual polarized X-Band 8x1 microstrip subarray for SAR applications [1,2]

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A non-contact interconnection through an electrically thick ground plate common to two microstrip lines

Cited by 20 publications

References 5 publications

Design of a Non-Contact Vertical Transition for a 3d Mm-Wave Multi-Chip Module Based on Shielded Membrane Supported Interconnects

Design of a Non-Contact Vertical Transition for a 3d Mm-Wave Multi-Chip Module Based on Shielded Membrane Supported Interconnects

A model for slot-coupled nonradiative dielectric waveguide and microstrip line

RF Interconnects Based on Electromagnetic Coupling for the Transition between Components in Highly Integrated SAR-Systems

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