A Noise Investigation of Tunnel-Diode Microwave Amplifiers

Yariv, Amnon; Cook, J. S.

doi:10.1109/jrproc.1961.287844

Cited by 10 publications

(5 citation statements)

References 4 publications

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“…1(d)] is supposed to be dominant in this region, our result (F ∼ 1) is not surprising. The experiments on germanium Esaki diodes [48,49] reported full-shot noise in this region. However, it is important to confirm the full-shot noise in the spin Esaki diode junction to evaluate the device quality.…”

Section: A Single Junction (Setup S)mentioning

confidence: 99%

Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

et al. 2020

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Electron transport across a tunneling barrier is governed by intricate and diverse causes such as interface conditions, material properties, and device geometries. Here, by measuring the shot noise, we investigate electron transport in a (Ga,Mn)As/GaAs-based spin Esaki diode junction over a wide range of bias voltage. The asymmetric electronic band profile across the junction allows us to tune the types of tunneling process. By changing the bias voltage in a single device, we successively address the conventional direct tunneling, the excess current conduction through the mid-gap localized states, and the thermal excitation current conduction. These observations lead to a proper comparison of the bias dependent Fano factors. While the Fano factor is unity for the direct tunneling, it is pronouncedly reduced in the excess current region. Thus, we have succeeded in evaluating several types of conduction process with the Fano factor in a single junction.

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Section: A Single Junction (Setup S)mentioning

confidence: 99%

Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

et al. 2020

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“…NF determines the degradation of SNR of the output signal compared to the incident signal, which should be minimized to maintain good signal quality. Specifically, the NF of a tunnel diode is given by [37,54]:…”

Section: High-sensitivity Rf Front-end For Gpsmirrormentioning

confidence: 99%

GPSMirror: Expanding Accurate GPS Positioning to Shadowed and Indoor Regions with Backscatter

Dong

Xie

Zhang

et al. 2023

Proceedings of the 29th Annual International Conference on Mobile Computing and Networking

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Despite the prevalence of GPS services, it still suffers from intermittent positioning with poor accuracy in partially shadowed regions like urban canyons, flyover shadows, and factories' indoor areas. Existing wisdom relies on hardware modifications of GPS receivers or power-hungry infrastructures requiring continuous plug-in power supply which is hard to provide in outdoor regions and some factories. This paper fills the gap with GPSMirror, the first GPS-strengthening system that works for unmodified smartphones with the assistance of newly-designed GPS backscatter. The key enabling techniques in GPSMirror include: (i) a careful hardware design with 𝜇𝑊 -level power consumption that pushes the limit of backscatter sensitivity to re-radiate extremely weak GPS signals with enough coverage approaching the regulation limit; and (ii) a novel GPS positioning algorithms achieving meter-level accuracy in shadowed regions as well as expanding locatable regions under inadequate satellites where conventional algorithms fail. We build a prototype of the GPSMirror tags and conduct comprehensive experiments to evaluate it. Our results show that a GPSMirror tag can provide coverage up to 27.7 m. GPSMirror achieves median positioning accuracy of 3.7 m and 4.6 m in indoor and urban canyon environments respectively. CCS CONCEPTS• Information systems → Global positioning systems;• Hardware → Networking hardware.

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“…Magnetron oscillators b ased on the circular electric mode couplin g principle have attained peak power levels of 1.5 Mw at X-band [Cook et al , 1961] and 300 kw at 8.6 mm [L a Plante, 1963]. Th e latter tube is of inverted type leading to a large increase in cathode surface area and extracting the power in a circular electric mode output waveguide.…”

Section: Crossed-field Tubesmentioning

confidence: 99%

“…A math ematical approach [Harker, 1960] which made possible convergent computer solutions proved valuable in this area. Methods of fo cusing hollow beams through long circui ts were also explored [Cook, 1961].…”

Section: Electron Gunsmentioning

confidence: 99%

“…There is a certain amoun t of interest in tunnel diode amplifiers for UHF and microwave frequencies [Yariv, 1961] and in tunnel diode oscillators (Sterzer, 1961]. The use of tunnel diodes in ultra-high-speed switching circuits is handicapped by the bilateral character of the device but some progress is being made towaI d their utilization in comp uteI' circuitry [Sims, 1961 :.…”

Section: Tunnel Diodesmentioning

confidence: 99%

See 1 more Smart Citation

URSI National Committee Report, XIV General Assembly, Tokyo, September 1963: Commission 7. Radio Electronics (10 sections)

Feinstein¹,

Peter²,

Ziel³

et al. 1964

J. RES. NATL. BUR. STAN. SECT. D. RAD. SCI.

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A Noise Investigation of Tunnel-Diode Microwave Amplifiers

Cited by 10 publications

References 4 publications

Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

Tunneling mechanism in a (Ga,Mn)As/GaAs-based spin Esaki diode investigated by bias-dependent shot noise measurements

GPSMirror: Expanding Accurate GPS Positioning to Shadowed and Indoor Regions with Backscatter

URSI National Committee Report, XIV General Assembly, Tokyo, September 1963: Commission 7. Radio Electronics (10 sections)

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