A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch

Cheon, Clifford D.; Cho, Moon-Kyu; Rao, Sunil G.; Cardoso, Adilson S.; Connor, Jeffrey D.; Cressler, John D.

doi:10.1109/lmwc.2020.3020317

Cited by 25 publications

(6 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to the significant impact of dissipative networks on insertion loss, resistors are not suitable use in the design of compensation circuits. According to the conversion relationship between impedance and transmission matrix, 15 the transmission matrix A 0 B 0 C 0 D 0 of the compensation network can be constrained by (2).…”

Section: Design and Analysis Of Spdt Switch Using Compensation Techno...mentioning

confidence: 99%

“…The new generation WiFi7 RF transceiver system has put forward higher demands for bandwidth, requiring backward compatibility and coexistence with legacy bandwidth, 1 making research on wide-band RF switches essential. [2][3][4][5][6][7] In most RF switch applications and designs, obtaining a wider bandwidth while ensuring low insertion loss is a great challenge. For broadband applications, switches using a π-type topology consisting of a transmission line and two parallel capacitors or using an additional inverting spiral coupled line have been proposed.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A broadband low‐loss SPDT RF switch using a new off‐chip compensation technology

Gong,

Cheng,

et al. 2024

Circuit Theory & Apps

View full text Add to dashboard Cite

SummaryAn off‐chip compensation technology for low‐loss and broadband characteristics of radio frequency (RF) switches is proposed based on mathematical analysis of series shunt single pole double throws switches in this letter. This compensation technology can absorb the parasitic parameters of the switch Field Effect Transistor, improving the insertion loss and return loss of the switch as well as supporting higher bandwidth. To verify the design principle, a RF switch, using the SANAN GaAs 0.15 um pseudomorphic High Electron Mobility Transistors (pHEMT) process, and an off‐chip compensation network were designed and implemented. Specifically, after using an off‐chip compensation network, the measured bandwidth of switch has been expanded from 1.1–8.8 to 0.8–11 GHz, while the input and output return loss have also improved significantly.

show abstract

Section: Design and Analysis Of Spdt Switch Using Compensation Techno...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A broadband low‐loss SPDT RF switch using a new off‐chip compensation technology

Gong,

Cheng,

et al. 2024

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…Better performance with simultaneously higher isolation, lower insertion loss as well as operation from DC can be achieved in SiGe using series-shunt topology (fig. 8) proposed in [25]. This type of switch utilizes three transistors.…”

Section: B Sige Hbtmentioning

confidence: 99%

State of the Art Sub-Terahertz Switching Solutions

Sobolewski

Yashchyshyn

2022

IEEE Access

View full text Add to dashboard Cite

show abstract

“…Past studies have shown that switches based on GaAs/GaN are less integrated and more expensive 2,3 . SiGe-based switches have the disadvantage of large insertion loss 4,5 . So, new technologies are desired to fabricate high-quality RF switches with the advantages of low insertion loss, high isolation, wide bandwidth, and a high power handling capability.…”

Section: Introductionmentioning

confidence: 99%

A low insertion loss RF switch using a 130 nm SOI process

Zhang¹,

Zheng

et al. 2022

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

To realize a better radio frequency (RF) communication system, the RF switch, as an important module, is used to cooperate with other devices to form an RF front end for optimizing communication performances. This paper designs a single-pole multi-throw (SPMT) RF switch, which exhibits a low insertion loss of 0.57 dB at 1.9 GHz under the voltage of 2.2 to 4.7 V. The RF switch is fabricated using a 130 nm silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) process. It can be used in multi-frequency and multi-mode applications such as 4G/5G. The proposed RF switch has competitive performance and can be combined with other modules to achieve better wireless communication and promote the development of ultra-wideband and multi-mode wireless communication systems.

show abstract

A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch

Cited by 25 publications

References 7 publications

A broadband low‐loss SPDT RF switch using a new off‐chip compensation technology

A broadband low‐loss SPDT RF switch using a new off‐chip compensation technology

State of the Art Sub-Terahertz Switching Solutions

A low insertion loss RF switch using a 130 nm SOI process

Contact Info

Product

Resources

About