A New Type of Photoelectric Effect in Cuprous Oxide in a Magnetic Field

Kikoin, I.K.; Noskov, M.M.

doi:10.1038/131725b0

Cited by 7 publications

(2 citation statements)

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“…In our case, we observe, in fact, the analog of the photomagnetoelectric effect discovered by Kikoin and Noskov as early as in 1934 [19]. The effect consists in the occurrence of an electric field under irradiation of a strongly absorbing homogeneous semiconductor placed in a magnetic field.…”

Section: Lpe: Mechanism Of the Magnetic-field Dependencesupporting

confidence: 67%

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

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Tarasov

et al. 2018

Physica E: Low-dimensional Systems and Nanostructures

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We demonstrate that the lateral photovoltaic effect in the Fe/SiO 2 /p-Si structure not only strongly depends on the optical radiation wavelength and temperature, but is also sensitive to external magnetic fields. The magnetic field lowers the absolute value of photovoltage regardless of the wavelength and temperature; however, the relative photovoltage variation significantly depends on these parameters. The lateral photovoltage is observed both on the Fe film and Si substrate sides and results from separation of photoinduced electrons and holes in a built-in electric field of the Schottky barrier with their subsequent diffusion to the structure in the lateral direction from the illuminated area. The observed features in the behavior of the lateral photovoltaic effect originate from the variation in the light absorption coefficient of the semiconductor and the related quantum efficiency upon light wavelength variation. In addition, an important role is played by the change in the characteristics of the Schottky barrier at the redistribution of optically generated carriers and temperature variation. The effect of the magnetic field is attributed to the Lorentz force, which bends trajectories of carriers drifting under the action of the Schottky barrier field and, consequently, suppresses the lateral photovoltaic effect.

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Section: Lpe: Mechanism Of the Magnetic-field Dependencesupporting

confidence: 67%

Magnetic field-driven lateral photovoltaic effect in the Fe/SiO2/p-Si hybrid structure with the Schottky barrier

Волков

Рауцкий

Tarasov

et al. 2018

Physica E: Low-dimensional Systems and Nanostructures

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show abstract

“…In addition to the current controlled by the radiation polarization, in an external magnetic field there can emerge a polarization-independent photocurrent. Physically, it originates from the 2D analogue of the the Kikoin-Noskov photo-electro-magnetic effect known for 3D materials 38,39 . The effect is related to an enhanced recombination rate of electrons and holes at the edge of the material, which may occur due to increased density of defect at the edge.…”

Section: Effect Of Magnetic Fieldmentioning

confidence: 99%