Abstract:A new transistor structure for high speed bipolar LSI, named PEE (Polycrystalline Electrode with Epitaxy) transistor, has been developed especially with respect to base and collector geometry. The basic features of the new structure are ; (1) polycrystalline silicon electrodes for a base and a collector and also polycrystalline silicon resistors, and (2) two-step oxide isolation which enables the bottom side isolation of an extrinsic base to the collector. The new structure can minimize parasitic capacitance, … Show more
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