A new total-dose-induced parasitic effect in enclosed-geometry transistors

Nowlin, R. Nathan; McEndree, S.R.; Wilson, Anthony L.; Alexander, D. R.

doi:10.1109/tns.2005.860713

Cited by 25 publications

(3 citation statements)

References 14 publications

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“…Radiation hardness-by-design (RHBD) enhances the radiation hardness of microelectronic circuitry without using special radiation hardened fabrication techniques [1][2][3][4][5][6][7] . The combination of application specific design techniques and intrinsic thin oxide radiation hardness of leading edge commercial CMOS allows realization of radiation-hardened ASIC readouts to support NASA space mission applications.…”

Section: Roic Radiation Hardness-by-design "Rhbd" Methodologymentioning

confidence: 99%

Thermopile detector radiation hard readout

Gaalema

Duyne

Gates

et al. 2010

Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon

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The NASA Jupiter Europa Orbiter (JEO) conceptual payload contains a thermal instrument with six different spectral bands ranging from 8µm to 100μm. The thermal instrument is based on multiple linear arrays of thermopile detectors that are intrinsically radiation hard; however, the thermopile CMOS readout needs to be hardened to tolerate the radiation sources of the JEO mission. Black Forest Engineering is developing a thermopile readout to tolerate the JEO mission radiation sources. The thermal instrument and ROIC process/design techniques are described to meet the JEO mission requirements.

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Section: Roic Radiation Hardness-by-design "Rhbd" Methodologymentioning

confidence: 99%

Thermopile detector radiation hard readout

Gaalema

Duyne

Gates

et al. 2010

Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon

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“…First generation radiation hard ROICs were only possible in commercial 0.25 μm CMOS processes with custom enclosed layout transistors (ELT). They achieved radiation tolerance above 50 Mrad [105]. In an ELT the gate completely surrounds the source (drain) and in turn the drain (source) surrounds the gate (figure 22).…”

Section: Radiation Tolerance Of Readout Integrated Circuitsmentioning

confidence: 99%

A review of advances in pixel detectors for experiments with high rate and radiation

Garcia-Sciveres¹,

Wermes²

2018

Rep. Prog. Phys.

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The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the high luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.

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“…5. If ringed layouts (ringed source, ringed inter-digitated) have the advantage of being more compact and allowing for any transistor size, they often require violation of design rules and have been shown to still exhibit some TID effects already in 0.35 µm [14]. In 130 nm implementations, where it is possible to decrease the overlap of the polysilicon over the p-substrate region surrounding the source, radiation-induced leakage current was comparable to the one observed for standard transistors with linear layout (Fig.…”

Section: Hbd For Tid Effectsmentioning

confidence: 99%

Radiation Effects and Hardening by Design in CMOS Technologies

Faccio

2011

Analog Circuit Design

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Radiation threatens the correct functionality of electronics in space, avionics, nuclear and High Energy Physics (HEP) applications. The engineering community involved in each of these disciplines has developed over time its specific set of solutions to ensure system reliability. The specificity is dictated by requirements in terms of cost, accessibility and mission criticality of each component/system. In some cases, the selection and use of Commercial-Off-The-Shelf components (COTS) represents the cheapest and most practical solution. Nevertheless, the need for extensive irradiation campaigns in view of selecting first, then assuring reproducible radiation response of the components increases the cost and required testing resources. On the other hand, the development or purchase of dedicated "radiation-tolerant" components eases qualification and procurement and ensures the required level of reliability, but is typically more expensive. A small catalog of radiation-tolerant components is in fact accessible commercially at a cost/function ratio considerably larger than for COTS. This cost is in part determined by the need for using a dedicated manufacturing process (most often CMOS) qualified against radiation effects. The low volume of this market, together with its strict quality assurance requirements, make the business profitable for a small number of "niche" foundries only if silicon wafers can be sold at large prices for a relatively long time. Processes are therefore not phased out as quickly as in the commercial marketplace, and new developments take more time. As a result, they are typically lagging two generations or more behind commercial-grade products.An alternative approach, increasingly popular in the last decade, is based on the use of commercial standard CMOS technologies. Integrated Circuits (ICs) are designed with dedicated techniques to withstand radiation effects, an approach that is called "Hardness By Design" (HBD). This allows circuit designers to using state-of-the-art processes to design ICs, while at the same time delivering radiationtolerant components. In doing so, designers must be aware of the radiation effects H.

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A new total-dose-induced parasitic effect in enclosed-geometry transistors

Cited by 25 publications

References 14 publications

Thermopile detector radiation hard readout

Thermopile detector radiation hard readout

A review of advances in pixel detectors for experiments with high rate and radiation

Radiation Effects and Hardening by Design in CMOS Technologies

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