Abstract:A new toroidal TFT structure has been developed for future generation SRAM products. This new TFT provides excellent device performance at scaled power supply voltages and offers significant savings in bitcell area.Thin film polysilicon transistors (TFTs) are used as bitcell loads in many 4Mb products and in all 16Mb SRAM products reported to date [l-81. It is believed that they will be required for all future generations of SRAM products [9]. Polysilicon resistors have reached their scaling limit as loads in … Show more
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