A new technique to assess electrical behaviour by microwave measurements. Application to perovskites RNiO3 (R = Nd, Sm)

Gire, A.; Jouffroy, M.; Theobald, Jean‐Gérard; Bohnké, O.; Frand, G.; Lacorre, P.

doi:10.1016/s0022-3697(96)00168-0

Cited by 16 publications

(6 citation statements)

References 8 publications

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“…This is probably due to a shift of free carrier properties (concentration, Fermi velocity) (for the metallic state at least) connected to a change of the O(2p)/Ni(3d) band overlapping driven by various perovskite distortions. No minimum of the metallic conductivity of Sm x Nd 1 À x NiO 3 at x =0.5, as observed by Gire et al [8] (entropic effect), was reported by Ambrosini and Hamet [4]. It has been suggested that changing the rare earth cation acts as internal chemical pressure (increasing internal pressure by substituting the rare earth cation with another one of larger ionic radius), which can lead, as for the isostatic pressure experiment [9], to a tunability of the metal-insulator transition temperature [10,11].…”

Section: Introductionsupporting

confidence: 53%

Structural evolution and epitaxial stabilisation of pulsed laser deposited Sm0.55Nd0.45NiO3 solid solution nanostructured films on undoped Si (1 0 0) and NdGaO3 substrates

Ngom

Madjoe

Fall

et al. 2010

Journal of Physics and Chemistry of Solids

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Section: Introductionsupporting

confidence: 53%

Structural evolution and epitaxial stabilisation of pulsed laser deposited Sm0.55Nd0.45NiO3 solid solution nanostructured films on undoped Si (1 0 0) and NdGaO3 substrates

Ngom

Madjoe

Fall

et al. 2010

Journal of Physics and Chemistry of Solids

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“…Zn content (in the bulk of each CuInSe 2 piece) was measured along the thickness of the samples. The conduction type and the material conductivity were determined by respectively, the thermal probe method and the high frequency technique (HF) in a contactless way based on microwave resonance cavity (Gire et al 1997;Gevrey et al 2001;Benabdeslem et al 2007).…”

Section: Methodsmentioning

confidence: 99%

Zn incorporation in CuInSe2: Particle size and strain effects on microstructural and electrical properties

et al. 2014

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International audienceIncorporation of the doping element Zn in the temperature range (550–700 °C) and the impact on structural and electrical properties of CuInSe2 material are investigated. X-ray diffraction patterns showed the chalcopyrite nature of the pure and doped CuInSe2 and revealed that diffusion temperature governs particle size as well as tensile strain. The calculated lattice parameters and cell volumes revealed that Zn diffuses in CuInSe2 by substitution on Cu sites. Electrical properties of the material have been investigated using a contact-less technique based on high frequency microwave (HF). It is found that Zn atoms influence the defect equilibrium resulting in the conversion of the conduction type. The conductivity of the samples has been found increasing as the diffusion temperature increases

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“…Several workers developed this technique further by using a circular bimodal cavity 2–6. This technique is useful for measurement of the carrier mobility of bulk semiconductors, organic semiconductors,7 powdered materials,8 perovskites,9 fine magnetic materials,10 pyrite crystals,11 and heterostructures 12. The microwave Hall effect is applied in the investigation of biological and polymeric materials.…”

Section: Introductionmentioning

confidence: 99%

Microwave hall mobility studies on polymer–metal oxide nanocomposites

Murthy

Subramanian

Kumar

et al. 2007

J of Applied Polymer Sci

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Films of polymer metal oxide composites with poly(methyl methacrylate) and metallic powders (CuO, Ni, and brushed Fe 3 O 4 ) were prepared with a spin-casting method. Electric transport studies indicated that the compositions surpassed the percolation threshold limit. Alternating current (AC) conductivity studies confirmed a hopping mechanism with power-law behavior in frequency. For the first time, the mobility values of the carriers in these films were measured by the contactless microwave Hall effect technique with a bimodal cavity operating at 14 GHz. In this technique, a circular bimodal cavity is used to measure the change in the transmission coefficient (proportional to the carrier mobility) due to the application of a static magnetic field perpendicular to the microwave electric fields. The mobility measurements indicated a decrease in mobility with increasing quantity of CuO and Ni and showed an increase in the carrier-lattice scattering, whereas the mobility increased with increasing Fe 3 O 4 due to the negative magneto resistance.

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A new technique to assess electrical behaviour by microwave measurements. Application to perovskites RNiO3 (R = Nd, Sm)

Cited by 16 publications

References 8 publications

Structural evolution and epitaxial stabilisation of pulsed laser deposited Sm0.55Nd0.45NiO3 solid solution nanostructured films on undoped Si (1 0 0) and NdGaO3 substrates

Structural evolution and epitaxial stabilisation of pulsed laser deposited Sm0.55Nd0.45NiO3 solid solution nanostructured films on undoped Si (1 0 0) and NdGaO3 substrates

Zn incorporation in CuInSe2: Particle size and strain effects on microstructural and electrical properties

Microwave hall mobility studies on polymer–metal oxide nanocomposites

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