A New Technique for Improving Kink Effect in High-Voltage LDMOS Transistors: M-shape Drift Region

500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit

“…SOI devices provide exceptional benefits, such as minimal leakage current (I OFF ), incredibly rapid power switches, and significantly decreased parasitic capacitance for high-voltage ICs [14][15][16][17][18][19]. Over the last decade, a lot of research has examined LDMOS-FETs on SOI, and the characteristics and power figure of merit (PFOM) have been enhanced [8,9,[20][21][22][23]. Achieving high V BR is a major challenge in LDMOSFET, and many research works and different studies have been carried out in this field.…”