A new spin-valve magnetic memory cell based on patterned single-domain magnetic multilayer NiFe/Cu/Co

Kong, Linshu; Pan, Quanjun; Li, M.; Cui, Baoshan; Chou, Stephen Y.

doi:10.1109/drc.1998.731117

Cited by 2 publications

(1 citation statement)

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“…Nanoimprint lithography [1] (NIL) is a sub-10 nm nanopatterning technology that defines patterns by mechanical deformation of a resist, followed by oxygen reactive ion etching (RIE) to remove the residual resist. Potential applications have been demonstrated in nanoelectronics [2][3][4][5][6][7], optics [8][9][10][11], high-density storage [12][13][14], nanomagnetic devices [15], bio-devices [16][17][18][19][20], transducers [21], and nanoelectromechanical elements [22]. NIL has also demonstrated multi-level alignments on four-inch wafers [23], and singlelevel patterning over a six-inch wafer scale [24].…”

Section: Introductionmentioning

confidence: 99%

Pattern transfer fidelity of nanoimprint lithography on six-inch wafers

Chen

Zhang

et al. 2002

Nanotechnology

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We studied the pattern transfer fidelity of nanoimprint lithography (NIL) by patterning sub-micron MESFET gates on six-inch wafers. The critical dimensions (CD) of the gate patterns on the mould, imprinted in resist, as well as after oxygen reactive ion etching (RIE) and metal lift-off were measured, separately, using an ultrahigh-resolution scanning electron microscope. Comparison of the measurements reveals that the as-imprinted gates in resist are 5.2% (or 37 nm) on average larger than those on the mould with a standard deviation of 1.2% (or 8 nm), and the gates after oxygen RIE and metal lift-off are 42% (or 296 nm) on average larger than those on the mould with a standard deviation of 8% (or 30 nm). Compared with photolithography, NIL has better pattern transfer fidelity with CD controls about four times smaller.

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