A new spin one defect in cubic SiC

Bratus, V. Ya.; Mel'nik, R. S.; Okulov, S. M.; Rodionov, V. N.; Shanina, B. D.; Smoliy, M.

doi:10.1016/j.physb.2009.08.124

Cited by 18 publications

(14 citation statements)

References 9 publications

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“…The PL bands from both of these reports and the spin-1 ODMR signal observed depend on the sample annealing temperature in a manner similar to our observations. An electron paramagnetic resonance study 14 has observed a spin-1 defect in 3C-SiC with zero-field splitting and symmetry similar to the one we observe, which persists up to room temperature. It tentatively attributed this signal to a neutral divacancy.…”

Section: Pl Linesupporting

confidence: 81%

Polytype control of spin qubits in silicon carbide

et al. 2013

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Crystal defects can confine isolated electronic spins and are promising candidates for solid-state quantum information. Alongside research focusing on nitrogen-vacancy centres in diamond, an alternative strategy seeks to identify new spin systems with an expanded set of technological capabilities, a materials-driven approach that could ultimately lead to ‘designer’ spins with tailored properties. Here we show that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including states in all three with room-temperature quantum coherence. The prevalence of this spin coherence shows that crystal polymorphism can be a degree of freedom for engineering spin qubits. Long spin coherence times allow us to use double electron–electron resonance to measure magnetic dipole interactions between spin ensembles in inequivalent lattice sites of the same crystal. Together with the distinct optical and spin transition energies of such inequivalent states, these interactions provide a route to dipole-coupled networks of separately addressable spins.

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Section: Pl Linesupporting

confidence: 81%

Polytype control of spin qubits in silicon carbide

et al. 2013

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“…The V C −V Si defect emits light at around 1180 nm, at the center of the second biological imaging window, where deep tissue imaging is possible because of the reduced light absorption and scattering ( Figure 2B). Besides the PL spectrum, direct identification of these centers is provided by the detected ODMR signal which shows a clear electron spin resonance at 1327 MHz, in excellent agreement with the reported value in the Ky5 electron paramagnetic resonance (EPR) center 43 and ODMR center 4,45 associated with a divacancy in cubic SiC ( Figure 2D). The measured full width at half maximum (FWHM) of 12 MHz at room temperature agrees well with the fwhm of ensembles of divacancies with favorable qubit properties, 3,4 and the observed 3.5% ODMR contrast is also consistent with the latest studies on divacancies in cubic SiC.…”

supporting

confidence: 84%

“…V C −V Si defects in the nanoparticles have a random orientation, which leads to arbitrary orientations of the corresponding spin quantization axis. As the resonance frequency of this defect is highly dependent on the angle between the magnetic field and the spin quantization axis, 43 the EPR spectrum of V C −V Si in SiC powder becomes very broad. However, sharp features arise at certain orientations, 44 corresponding to the divacancy EPR signal 45 in the SiC NPs (Figure 2A).…”

mentioning

confidence: 99%

Room-Temperature Defect Qubits in Ultrasmall Nanocrystals

Beke

Valenta

Károlyházy

et al. 2020

J. Phys. Chem. Lett.

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There is an urgent quest for room-temperature qubits in nanometer-sized, ultrasmall nanocrystals for quantum biosensing, hyperpolarization of biomolecules, and quantum information processing. Thus far, the preparation of such qubits at the nanoscale has remained futile. Here, we present a synthesis method that avoids any interaction of the solid with high-energy particles and uses self-propagated high-temperature synthesis with a subsequent electrochemical method, the no-photon exciton generation chemistry to produce room-temperature qubits in ultrasmall nanocrystals of sizes down to 3 nm with high yield. We first create the host silicon carbide (SiC) crystallites by high-temperature synthesis and then apply wet chemical etching, which results in ultrasmall SiC nanocrystals and facilitates the creation of thermally stable defect qubits in the material. We demonstrate room-temperature optically detected magnetic resonance signal of divacancy qubits with 3.5% contrast from these nanoparticles with emission wavelengths falling in the second biological window (1000− 1380 nm). These results constitute the formation of nonperturbative bioagents for quantum sensing and efficient hyperpolarization.

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“…Similarly in 6H‐SiC ODMR has been observed for QL1‐QL6, in this case as well QL1, QL2 and QL6 have C 3 v symmetry, while the others are oriented along basal planes, resulting in the lower C 1 h symmetry and non‐degenerate spin transitions at B = 0. These recent studies reveal an ODMR resonance at the same frequency in 3C‐SiC of the 4H and 6H‐SiC counterpart, and therefore a S = 1 has been attributed to this defect, and it has been tentatively assigned to a neutral di‐vacancy in 3C . The ODMR of previous observations in the 3C‐SiC with a similar PL, it has a zero field splitting between 50–80 MHz with a S = 1/2, therefore likely another defect.…”

Section: Optical Defects In Sicmentioning

confidence: 55%

Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors

Castelletto

Johnson

Boretti

2013

Advanced Optical Materials

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Cascade-sensitized 800 nm excited tridoped upconversion nanoparticles (UC-NPs) are developed for the fi rst time. This novel class of UCNPs employ Nd 3+ as an 800 nm photon sensitizer and Yb 3+ as a bridging ion, and show strong upconversion emission without photobleaching. They outperform classical 980 nm excited UCNPs in regard to signifi cantly decreased NIR photon absorption in water and decreased laserinduced water heating effects.

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A new spin one defect in cubic SiC

Cited by 18 publications

References 9 publications

Polytype control of spin qubits in silicon carbide

Polytype control of spin qubits in silicon carbide

Room-Temperature Defect Qubits in Ultrasmall Nanocrystals

Quantum Effects in Silicon Carbide Hold Promise for Novel Integrated Devices and Sensors

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