A new single buffer layer for YBCO coated conductors prepared by chemical solution deposition

Fundamental absorption edges in heteroepitaxial YBiO3 thin films

“…[1][2][3][4] Recently, first-principles electronic band structure calculations proposed YBiO 3 as a novel oxide topological insulator:…”

“…At x = 0.5, Y x Bi 1−x O 1.5 (YBiO 3 ) has a cubic lattice constant a = 5.4188Å, 10 and its pseudocubic primitive cell with a/ √ 2 is closely matched to LaAlO 3 , SrTiO 3 , (LaAlO 3 ) 0 .3(Sr 2 TaAlO 6 ) 0 .7 (LSAT) and also YBa 2 Cu 3 O 7−δ . Heteroepitaxial YBiO 3 (100) thin films have hence been prepared as buffer layers a) Corresponding Author: marcus.jenderka@physik.uni-leipzig.de b) http://research.uni-leipzig.de/hlp/ on LaAlO 3 (001), SrTiO 3 (001) and LSAT(001) singlecrystalline substrates by chemical solution [1][2][3] and pulsed laser deposition. 4,11 Their surface-morphology is characterized by crystalline grains of around 50 nm and root-mean-squared (RMS) surface roughnesses between 2.6 to 1.8 nm at a film thickness of 140 and 40 nm, respectively.…”

The Effect of Sintering Oxygen Partial Pressure on a SmBiO3 Buffer Layer for Coated Conductors via Chemical Solution Deposition

“…In order to lower the sintering temperature of the buffer layer for coated conductors in CSD processing, a class of new buffer materials, REBiO 3 (RE correspond to a rare earth element), were developed, and their physical and chemical property were systematically characterized [11,12]. A REBiO 3 buffer layer can be epitaxially grown at a relatively low temperature of around 700-900 • C [12][13][14][15][16][17] because of its low formation temperature. Lowering the processing temperature not only means saving energy and reducing cost, but can also avoid or reduce some of the difficulties of manufacturing coated conductors, e.g., avoiding mechanical strength degradation at high temperatures for metal substrates and reducing chemical diffusion in the interface of the buffer layer and substrate.…”

“…In addition, once formed, the REBiO 3 buffer layer possesses very good thermal stability as studied via thermal decomposition experiments in different oxygen partial pressures for YBiO 3 (YBO) precursor powders [13]. Taking these advantages, YBO and SmBiO 3 (SBO) films have been successfully grown in air [14,15]. GdBiO 3 (GBO) and DyBiO 3 (DBO) films have also been successfully grown in argon gas [16,17].…”

Sm-doped CeO2 single buffer layer for YBCO coated conductors by polymer assisted chemical solution deposition (PACSD) method

“…In an effort to obtain highly textured REBCO coated conductors, many buffer layer materials have been identified including SrTiO 3 [8], La 2 Zr 2 O 7 [9,10], CeO 2 [11,12], RE 2 O 3 [13][14][15] and REBiO 3 [16][17][18][19]. As a promising candidate of buffer layer material for YBCO coated conductors, CeO 2 has been prepared by many groups due to its excellent chemical compatibility with Ni-based alloy substrates as well as good lattice match with YBCO or REBCO.…”