A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor-Based Biosensor

Dwivedi, Praveen; Singh, Rohit; Sengar, Brajendra S.; Kumar, Amitesh; Garg, Vivek

doi:10.1109/jsen.2020.3028153

Cited by 46 publications

(31 citation statements)

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“…From ( 1 ) it is observed mathematically that with the increase in the dielectric constant of biomolecules in the nano-gap, the band bending sharpens because of high of electric field. From ( 2 ) we can conclude mathematically that when the dielectric constant of biomolecules increases, the tunnelling width reduces and T WKB increases which will raise the I on [ 23 ]. Figure 5 highlights the increase in BTBT generation.…”

Section: Resultsmentioning

confidence: 99%

“…The use of non-local BTBT model in SILVACO ATLAS TCAD aids in treating the BTBT phenomenon as a classical generation process. Electrons (not holes) drive significantly high BTBT generation rate when biomolecule is present inside the nano-gap [ 23 ]. From the DC transfer characteristics shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Parameters like SS, threshold voltage shift (△V th ), I on /I off ratio largely drive sensitivity of a biosensor [ 1 ]. Asymmetrically doped source and drain helps in achieving improved sensitivity of the biosensor [ 23 ]. From Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Transient response approach can be implemented for realizing greater values of selectivity to distinguish specific biomolecules in presence of different other biomolecules [ 23 ]. Figure 10 b shows the selectivity of the proposed GE-HTFET biosensor for the reported biomolecules at 10 –9 s, 10 –6 s, 10 –3 s time stamps.…”

Section: Resultsmentioning

confidence: 99%

“…13 b, maximum I on is observed for accumulation of streptavidin over biotin over APTES (streptavidin + biotin + APTES). Thus, transient response can be successfully used as a tool for achieving realistic approach for biosensing operations [ 23 ]. Performance benchmarking of the proposed GE-HTFET biosensor with the previous FET-based biosensors is shown in Table 1 in terms of ON current sensitivity (S on ).…”

Section: Resultsmentioning

confidence: 99%

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Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

2023

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In this article, the authors have articulated DC as well as transient response of a dielectric modulated gate-engineered heterostructure tunnel field effect transistor (GE-HTFET)-based biosensor for label-free detection. A low (direct) bandgap material, indium arsenide (InAs) has been selectively used in the source region to achieve improved band-to-band tunneling of carriers in the tunnel FET. The extended gate architecture is incorporated to stabilize the biomolecules in the nano-cavity aiding significant boost in ON current sensitivity. Using SILVACO ATLAS TCAD tool, the sensitivity of the biosensor is evaluated considering two important parameters possessed by bio-targets, i.e. dielectric constant ( k ) and charge density ( N ). A thorough analysis has been performed to show the impact of variation of dielectric constants and charge density of biomolecules over transfer characteristics of the device. ON current level (Ion) is eventually extracted which is considered here as the suitable sensing parameter of the device. Transient response to detect the settling time of Ion is also demonstrated here in presence of both positively and negatively charged bio-species with varying values of dielectric constant. Then ON current sensitivity is extracted accordingly for different locations of biomolecules within the nano-gap. Finally, an extensive comparative analysis of the present structure in terms of ON current sensitivity is shown to justify its sensing ability as compared to recently reported device structures.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

2023

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Sensitivity, linearity, and noise evaluation of L‐shaped dielectrically modulated label free tunnel field‐effect transistor biosensor

Singh,

Sahu

2024

Int J Numerical Modelling

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This research article examines a L‐shaped dielectrically modulated label free TFET (L‐DM‐TFET) biosensor for the purpose of detecting different biomolecules using a label‐free biosensing detection technique. The proposed structure allows for the recognition of biomolecules by modulating various electrical properties, such as the drain current, transconductance, and linearity parameters. The source region of the proposed TFET incorporates a SiGe (source)/Si (channel) heterojunction, utilizing a low bandgap material of SiGe. This heterojunction is employed to enhance the ON‐state current of the devices. The materials used and the fabrication steps involved in our proposed device are compatible with complementary metal‐oxide‐semiconductor (CMOS) technology. This analysis is conducted using a calibrated Silvaco technology computer‐aided design (TCAD) simulator. Additionally, by considering a dielectric constant range of 1–12, we calculate various figure of merits (FOMs) parameters for the device. These include evaluation of linearity, sensitivity, and noise characteristics. Furthermore, we have conducted an analysis of linearity FOMs, such as VIP2, VIP3, IIP3, and IMD3 for the proposed device under study. Additionally, the linearity analysis of the presented tunneling FET (TFET) indicates the device's excellent performance in distortionless switching operations. Consequently, the L‐shaped dielectrically modulated biosensor holds potential suitability for high‐speed circuit designs.

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Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

Shaw

Mukhopadhyay

2023

Physica Status Solidi (a)

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Herein, an n‐channel dual material double gate tunnel field effect transistor (DMDG‐TFET) with a gate–drain underlap using Ge and Ge1−zSnz is proposed. An analytical model has been developed to optimize the length of the underlap region for Ge and Ge–Sn alloy as the channel material. The ambipolarity shown by TFET has been utilized to perform a label‐free biosensing in response to the change of permittivity of the biomaterials used in the gate–drain underlap region. The use of Ge–Sn alloy as a channel material results in a lower ambipolar current but higher sensitivity to the presence of biomolecules. DMDG with workfunction (4 and 4.4 eV) is used to optimize the device performance. The analytical results have been validated by the results obtained using commercial software (Silvaco TCAD). A high sensitivity of the biosensor device is obtained by utilizing the tunnel FET ambipolar current with optimized gate underlap of LUD = 55 nm (for Ge) and LUD = 38 nm (for Ge–Sn alloy).

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A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor-Based Biosensor

Cited by 46 publications

References 46 publications

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

Sensitivity, linearity, and noise evaluation of L‐shaped dielectrically modulated label free tunnel field‐effect transistor biosensor

Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

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A New Simulation Approach of Transient Response to Enhance the Selectivity and Sensitivity in Tunneling Field Effect Transistor-Based Biosensor

Cited by 46 publications

References 46 publications

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

Investigation of gate-engineered heterostructure tunnel field effect transistor as a label-free biosensor: a compact study

Sensitivity, linearity, and noise evaluation of L‐shaped dielectrically modulated label free tunnel field‐effect transistor biosensor

Ge‐ and Ge1−zSnz‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors

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Product

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Ge‐ and Ge_1−zSn_z‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors