A New Semiconductor Photocell Using Lateral Photoeffect

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

“…4, the most important feature of planar LPE devices. [1][2][3][4] This behavior is independent of the contact configuration with respect to the ground. It is worth noting that the T-LPE amplitude and shows a non-zero value when spot is centered exactly between the electrodes.…”

“…This potential difference is known as the lateral photovoltaic effect (LPE). [1][2][3][4] Since a few decades, the LPE has been reported in wide classes of systems ranging from organic semiconductors, 5 Ti/Si amorphous superlattices, 6 semiconductor heterostructures, 7 including two-dimensional electron systems (2DES). 8 On the practical side, the LPE has been widely used to develop high precision position-sensitive detectors (PSD).…”

Laser Pulses Applications in Photovoltaic Effect

“…Furthermore, LPV experiments under the illumination of pulsed laser were also carried in order to further study the photovoltaic effect in oxides heterostructures Jin et al, 2009). The well-established LPV theory (Wallmark, 1957;Lucovsky, 1960), that in nonuniformly irradiated p-n junctions electric potential near the irradiation center is higher than that far from the center on the ptype side while it is lower than that far away from the center on the n-type side, was challenged by the observed unusual LPV . In other words, the signs measured on both sides of p-n junction will be opposite according to the conventional LPV whereas they are same in the observed unusual LPV.…”

Near Infrared Lateral Photovoltaic Effect in LaTiO3Films

“…Lateral photovoltaic effect (LPE) discovered by Schottky in 1930 has been widely used as position sensitive detectors (PSDs) in many fields requiring precision measurements, such as robotic vision, remote optical alignment, machine tool alignment, and medical instrumentation, [1,2]. In order to improve the sensitivity and linearity of PSDs, many researchers have made efforts to study LPE in various kinds of materials systems, such as conventional p-n junctions, hydrogenated amorphous silicon based structures, porous silicon, Ti/Si amorphous superlattices, semiconducting polymer, metal-semiconductor and metal-insulatorsemiconductor structures, modulation-doped AlGaAs/GaAs heterostructure, and Cu 2 O nanoscale film, [3][4][5][6][7][8][9][10][11].…”