A new route for fabricating CdO/c-Si heterojunction solar cells

Characteristics Study of Nanostructured CdO Prepared by Spray Pyrolysis

“…It was used widely in many application such as transparent electrodes, solar cells , photo transistors ,gas sensors, photodetectors [1][2][3]. Many methods was employed to synthesis CdO thin films e.g sputtering , thermal evaporation , laser deposition ,rapid thermal oxidation of cadmium , sol-gel , chemical bath deposition and spray pyrolysis [4][5][6][7][8]. The spray pyrolysis technique was used extensively for TCOs film preparation due to its simplicity and large area formation.It is reported that the properties of sprayed films are strongly depended on preparation conditions for instance substrate temperature ,spray rate , distance between nozzle and substrate and cooling rate [9].…”

The importance of the methanol content in the precursor solution, on the physical properties of cadmium oxide thin films prepared by the sol–gel method

“…Different types of simple heterojunction solar cells have been studied: CdO/crystalline-Si [1], CdO/CdTe [2][3][4][5], CdO/Cu 2 O [6], CdO/CuGaInSe [7] and CdO/ITO in dye-sensitized solar cells, where the CdO has been employed in place of TiO 2 [8]. As well, CdO films can be obtained by several techniques, such as, reactive sputtering [9][10][11], activated reactive evaporation [3,12], chemical bath deposition [13], spray pyrolysis [14], rapid thermal oxidation [1], sol-gel [15][16][17][18] and recently In, Sn, Al and Ti doped CdO films deposited by pulsed laser technique [19][20][21][22]. In order to diminish the cost of the solar cells, it is important to use simple and cheaper deposition techniques.…”

Physical properties of CdO nanoparticles synthesized by green chemistry via Hibiscus Sabdariffa flower extract

“…8 displays the currentevoltage characteristic of the CdO/c-Si heterojunction solar cell under dark and illumination conditions in the forward as well as in the reverse directions. As in the case of Ismail et al [46], the current heterojunction has acceptable rectification characteristics. The forward current tends to saturate at V f~1 V due to series resistance originating from the large value of mismatch lattice constant between CdO and Si (14.6%) but also the significant nanoparticles/grains size boundaries.…”